The effect of (PVP-Cu2Te) organic interlayer on the electrical parameters of Al/p-Si Schottky barrier diodes (SBDs) at room temperature
Küçük Resim Yok
Tarih
2021
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In the presented study, firstly the microstructural features of the PVP-Cu2Te interlayer was evaluated by employing XRD and SEM approaches and the PVP-Cu2Te is formed on the p-Si wafer. Secondly, both the forward and reverse biases current-voltage and capacitance/conductance-frequency characteristics of the prepared Al/pSi (MS) and Al/(PVP-Cu2Te)/p-Si (MPS) structures have been analyzed to compare the organic interlayer effect. Basic electrical parameters for reverse-saturation current (I-o), ideality factor (n), and zero-bias BH (Phi(Bo)) were calculated as 2.3 x 10(-6) A, 2.38, and 0.576 eV for MS and 2.2 x 10(-8) A, 1.85, and 0.692 eV for MPS structures, respectively. Apparently, Io value for MPS is almost two order lower than MS structure. Besides, organic interlayer usage enhances the performance of MPS structure in respect of high BH, high-rectifying ratio, low-series (R-s) resistance, and low-leakage current. When the experimental and theoretical field-lowering coefficients compared, Poole-Frenkel emission (PFE) is dominated for two structures at reverse bias zone.
Açıklama
Anahtar Kelimeler
Cu2Te-PVP interlayer, Ultrasound-assisted method, Electrical characterization, Poole-Frenkel emission, Organic polymers, Metal-polymer-semiconductors
Kaynak
Physica B-Condensed Matter
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
604
