Functionalized Dithienylthiazolo[5,4-d]thiazoles For Solution-Processable Organic Field-Effect Transistors

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dc.authoridCHAMPAGNE, Benoit/0000-0003-3678-8875
dc.authoridVan Assche, Guy/0000-0003-0452-6272
dc.authoridD'Haen, Jan/0000-0003-4487-3885
dc.authoridRodriguez, Silvio David/0000-0001-5559-8124
dc.authoridVanderzande, Dirk/0000-0002-9110-124X
dc.authoridLUTSEN, Laurence/0000-0002-3576-0945
dc.authoridVan den Brande, Niko/0000-0002-5324-6261
dc.contributor.authorVan Mierloo, Sarah
dc.contributor.authorVasseur, Karolien
dc.contributor.authorVan den Brande, Niko
dc.contributor.authorBoyukbayram, Ayse E.
dc.contributor.authorRuttens, Bart
dc.contributor.authorRodriguez, Silvio D.
dc.contributor.authorBotek, Edith
dc.date.accessioned2024-09-29T15:50:39Z
dc.date.available2024-09-29T15:50:39Z
dc.date.issued2012
dc.departmentKarabük Üniversitesien_US
dc.description.abstractA series of 5'-aryl-substituted 2,5-bis(3'-hexylthiophen-2'-yl)thiazolo[5,4-d]thiazole derivatives was synthesized and these expanded semiconductors were investigated as active materials for solution-processable organic field-effect transistors. Field-effect mobilities of up to 10-3 cm2?V-1?s-1 were obtained, representing the first reasonable FET behavior for highly soluble thiazolo[5,4-d]thiazole-based small organic compounds suitable for printable electronics. Thermal and electrooptical material properties were studied by thermogravimetric analysis, differential scanning calorimetry, cyclic voltammetry, and UV/Vis spectroscopy. Trends in thermal and optical data were supported by (time-dependent) density functional theory calculations. Additional X-ray diffraction, atomic force microscopy, and scanning electron microscopy studies provided insight in the relationship between the molecular structures, film morphologies, and FET performances. The fibrillar microcrystalline structure observed for the best-performing thienyl-substituted material was linked to the high mobility.en_US
dc.description.sponsorshipIWT (Institute for the Promotion of Innovation by Science and Technology in Flanders) through the SBO [060843 PolySpec]; European ONE-P project [212311]; FRS-FRFC [2.4.617.07.F]; FUNDPen_US
dc.description.sponsorshipWe gratefully acknowledge the IWT (Institute for the Promotion of Innovation by Science and Technology in Flanders) for financial support through the SBO-project 060843 PolySpec. We also acknowledge the European ONE-P project for grant agreement no. 212311, which facilitates the IMEC-IMOMEC collaboration. Furthermore, we gratefully thank BELSPO in the frame of the IAP P6/27 and Phase VII/FS2 networks as well as MINCyT and FRS-FNRS for supporting the Buenos Aires-Namur scientific cooperation. The computational calculations were performed on the Interuniversity Scientific Computing Facility (ISCF) installed at the Facultes Universitaires Notre-Dame de la Paix (FUNDP, Namur, Belgium), for which we acknowledge financial support from the FRS-FRFC (convention no. 2.4.617.07.F), and from the FUNDP. V. L. thanks the FRS-FNRS for his postdoctoral research position. N.V.d.B. and W. M. thank the FWO (Fund for Scientific Research-Flanders) for a doctoral and postdoctoral research mandate, respectively.en_US
dc.identifier.doi10.1002/cplu.201200132
dc.identifier.endpage930en_US
dc.identifier.issn2192-6506
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-84868569504en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage923en_US
dc.identifier.urihttps://doi.org/10.1002/cplu.201200132
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3657
dc.identifier.volume77en_US
dc.identifier.wosWOS:000309751300008en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofChempluschemen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectconducting materialsen_US
dc.subjectfield-effect transistorsen_US
dc.subjectorganic electronicsen_US
dc.subjectthiazolo[5en_US
dc.subject4-d]thiazolesen_US
dc.subjectthin film morphologyen_US
dc.titleFunctionalized Dithienylthiazolo[5,4-d]thiazoles For Solution-Processable Organic Field-Effect Transistorsen_US
dc.typeArticleen_US

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