Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices

Basit Öğe Kaydı
dc.authoridKaymaz, Ahmet/0000-0003-2262-1599
dc.contributor.authorBaydilli, Esra Evcin
dc.contributor.authorKaymaz, Ahmet
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T16:00:37Z
dc.date.available2024-09-29T16:00:37Z
dc.date.issued2024
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn this study, negative dielectric properties of the natural oxide interfacial-layered metal-insulator-semiconductor (MIS) type structure have been investigated under different radiation doses. Some essential parameters of the GaAs-based MIS structure, such as dielectric constant (e '), dielectric loss (e) and loss factor (tan6), were obtained from the capacitance/conductance-voltage (C-G/w-V) data for before and after radiation to investigate the effects of gamma-rays on the dielectric properties of the device. Measurements were performed in the voltage range of +/- 4 V, 500 kHz frequency and at room temperature for before irradiation and after 5 and 10 kGy radiation doses to obtain C-G/w-V data under various conditions. On the other hand, the voltage-dependent variation of the ac-conductivity (aac) and complex electric modulus (M*) (including its real (M ') and the imaginary (M '') parts) of the structure were calculated before and after radiation. As a result, the peaks at approximately 1.75 V were observed in the voltage-dependent variation of the dielectric constant before irradiation and after all radiation doses. It was also observed from this point that the dielectric constant quickly took negative values, and these behaviours were attributed to the structure's differential change of charge, polarization, and electrical resonance. However, there was no significant change in the radiation-dependent dielectric properties of the structure up to the abnormal peak values. In conclusion, it can be said that although the device is generally resistant to ionizing radiation, it exhibits significant change behaviour in the negative dielectric region. This result means that when the device is operated under appropriate conditions, it can respond as a radiationresistant rectifier diode or electronic device that can benefit from its negative dielectric properties.en_US
dc.identifier.doi10.1016/j.radphyschem.2024.111877
dc.identifier.issn0969-806X
dc.identifier.issn1879-0895
dc.identifier.scopus2-s2.0-85194517889en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.radphyschem.2024.111877
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5248
dc.identifier.volume222en_US
dc.identifier.wosWOS:001249917500002en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofRadiation Physics and Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNegative -dielectricen_US
dc.subjectGamma -irradiationen_US
dc.subjectMIS structureen_US
dc.subjectElectric modulusen_US
dc.subjectGaAs -based electronic devicesen_US
dc.titleOverview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devicesen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu