Comparative study of the effect of different interlayer thicknesses on frequency dependent electric modulus and conductivity in Au/n-Si structures

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dc.contributor.authorArslan, Bilal
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorOrak, Ikram
dc.contributor.authorTecimer, Habibe Uslu
dc.date.accessioned2024-09-29T16:00:53Z
dc.date.available2024-09-29T16:00:53Z
dc.date.issued2021
dc.departmentKarabük Üniversitesien_US
dc.description.abstractFrequency dependent capacitance (C) and conductance (G/omega) data for Au/n-Si structures fabricated at room temperature without interlayers and with 5 nm and 10 nm aluminium-oxide (Al2O3) interlayer thicknesses are investigated. The Al2O3 interlayers were deposited by atomic layer deposition. Data on the complex electric modulus (M*) and alternating current electrical conductivity (sigma(ac)) values are acquired for the three structures in the 3 kHz-3 MHz frequency range between (-3 V) - (+5 V) bias interval and compared. It was observed that the C and G/omega values decreased with the increase in frequency and interlayer thickness and that the frequency increases as a result of polarization which also increases M*, especially in 5 nm and 10 nm interlayered structures. Frequency and interlayer thickness increment have a positive impact by increasing sigma(ac), while conductivity has been shown to be highly sensitive to the presence of an interlayer and to its thickness.en_US
dc.description.sponsorshipKarabuk University Scientific Research Project-Project [KBU-BAP-18-YL-187]en_US
dc.description.sponsorshipThis project was supported by the Karabuk University Scientific Research Project-Project no. KBU-BAP-18-YL-187.en_US
dc.identifier.doi10.1016/j.tsf.2021.138968
dc.identifier.issn0040-6090
dc.identifier.issn1879-2731
dc.identifier.scopus2-s2.0-85117713067en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2021.138968
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5415
dc.identifier.volume738en_US
dc.identifier.wosWOS:000718885300002en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCapacitance-conductanceen_US
dc.subjectConductivityen_US
dc.subjectFrequency-polarization responseen_US
dc.subjectInterlayer thicknessen_US
dc.subjectMetal-Semiconductoren_US
dc.titleComparative study of the effect of different interlayer thicknesses on frequency dependent electric modulus and conductivity in Au/n-Si structuresen_US
dc.typeArticleen_US

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