Frequency dependent C-V and G/?-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes

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dc.authoridCICEK, OSMAN/0000-0002-2765-4165
dc.authoridUslu Tecimer, Habibe/0000-0002-0094-7427
dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.contributor.authorTan, S. O.
dc.contributor.authorTecimer, H. Uslu
dc.contributor.authorCicek, O.
dc.contributor.authorTecimer, H.
dc.contributor.authorAltindal, S.
dc.date.accessioned2024-09-29T15:51:15Z
dc.date.available2024-09-29T15:51:15Z
dc.date.issued2017
dc.departmentKarabük Üniversitesien_US
dc.description.abstractAu/ZnO/n-GaAs Schottky barrier diodes (SBDs) have been examined by the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. The frequency dependence characteristics of measurements were obtained under various illumination levels at room temperature. The C and G/omega relation was observed as the decrement in capacitance corresponds to an increment in conductance. The increment of negative capacitance (NC) values by high frequency at forward biases was ascribed to the series resistance, interface states and interfacial layer. Considering the illumination intensity, the NC values were observed to increase with the decreasing illumination while the G/omega values increase with the increasing illumination. This behavior was referred to the increments in the polarization and carriers in the SBDs. The adverse impacts of the voltage dependent resistivity were decreased with increasing illumination levels. Eventually, a strong interaction between the electrical properties of SBDs and the frequency, illumination and applied bias voltage was demonstrated by experimental results.en_US
dc.description.sponsorshipScientific Research Project (BAP) Coordinatorship of Karabuk University [KBU-BAP-14/2-DR-005, KBU-BAP-14/2-DR-006]en_US
dc.description.sponsorshipThis study has been funded by Scientific Research Project (BAP) Coordinatorship of Karabuk University with project codes of KBU-BAP-14/2-DR-005 & KBU-BAP-14/2-DR-006.en_US
dc.identifier.doi10.1007/s10854-016-6147-0
dc.identifier.endpage4957en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-85000399512en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage4951en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-016-6147-0
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3973
dc.identifier.volume28en_US
dc.identifier.wosWOS:000395072700057en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNegative Capacitanceen_US
dc.subjectInterface Statesen_US
dc.subjectSeries Resistanceen_US
dc.subjectSemiconductoren_US
dc.subjectContactsen_US
dc.subjectHeighten_US
dc.subjectPhotodiodeen_US
dc.subjectVoltageen_US
dc.subjectSurfaceen_US
dc.subjectOriginen_US
dc.titleFrequency dependent C-V and G/?-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodesen_US
dc.typeArticleen_US

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