Donor-related third-order optical nonlinearites in GaAs/AlGaAs quantum wells at the THz region

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dc.authoridAslan, Bulent/0009-0009-7125-7202
dc.contributor.authorYildirim, Hasan
dc.contributor.authorAslan, Bulent
dc.date.accessioned2024-09-29T16:03:02Z
dc.date.available2024-09-29T16:03:02Z
dc.date.issued2011
dc.departmentKarabük Üniversitesien_US
dc.description.abstractGaAs/AlGaAs quantum wells doped with donor atoms are investigated for nonlinear optical applications in the THz range. The electronic properties of the quantum wells are obtained numerically by applying an iterative shooting algorithm. Donor binding energies are computed through the evaluation of variational wavefunctions. The solution of the density matrix equations of motion for non-interacting two-level atoms within the rotating wave approximation is used to formulate the third-order optical nonlinearities. Transitions between the 1s and 2p+ impurity states because of an incident light polarized perpendicularly to the growth direction are considered as the origins of optical nonlinearity. Following a set of computations for a quantum well doped at the center, it is found that the nonlinear susceptibility decreases when the well becomes wider or the Al concentration increases. Additionally, when the doping center is shifted to the well edge, the nonlinear susceptibility decreases too. A large nonlinear figure of merit is obtainable in wider wells compared to the narrower wells although the latter delivers larger nonlinear susceptibilities.en_US
dc.identifier.doi10.1088/0268-1242/26/8/085017
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-80052002105en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1088/0268-1242/26/8/085017
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5854
dc.identifier.volume26en_US
dc.identifier.wosWOS:000293895900018en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectFar-Infrared Absorptionen_US
dc.subjectShallow Donorsen_US
dc.subjectSpectraen_US
dc.subjectTransitionsen_US
dc.subjectImpuritiesen_US
dc.subjectBindingen_US
dc.subjectFieldsen_US
dc.subjectStatesen_US
dc.titleDonor-related third-order optical nonlinearites in GaAs/AlGaAs quantum wells at the THz regionen_US
dc.typeArticleen_US

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