Er3+ doped chalcogenide glasses and sputtered thin films: structural and spectroscopic characterization
Küçük Resim Yok
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this research, we report Er3+ doped chalcogenide based glasses, well known for infrared transparency with various applications in the photonics and optoelectronics. Er3+ doped chalcogenide glasses were prepared by using vertical furnace with an argon gas atmosphere. For the structural and spectroscopic measurements, thin films at about 460nm thicknesses were deposited by using radio-frequency (RF) magnetron sputtering technique. Er3+ deposited thin films were annealed at different temperature as 450, 500, 550, and 600 degrees C in the tube furnace and rapid thermal annealer (RTA) at 2 degrees C/min, and 10 degrees C/min heating rate, respectively. As a result, absorptions, luminescence, and structural properties of the Er3+ ion doped GLS thin films were affected from different annealing process.
Açıklama
5th International Symposium on Next-Generation Electronics (ISNE) -- MAY 04-06, 2016 -- Hsinchu, TAIWAN
Anahtar Kelimeler
Chalcogenide, thin films, waveguide, photolitoghraphy
Kaynak
2016 5th International Symposium On Next-Generation Electronics (Isne)
WoS Q Değeri
N/A
