Er3+ doped chalcogenide glasses and sputtered thin films: structural and spectroscopic characterization

dc.contributor.authorKabalci, Idris
dc.contributor.authorHewak, Daniel W.
dc.date.accessioned2024-09-29T16:11:27Z
dc.date.available2024-09-29T16:11:27Z
dc.date.issued2016
dc.departmentKarabük Üniversitesien_US
dc.description5th International Symposium on Next-Generation Electronics (ISNE) -- MAY 04-06, 2016 -- Hsinchu, TAIWANen_US
dc.description.abstractIn this research, we report Er3+ doped chalcogenide based glasses, well known for infrared transparency with various applications in the photonics and optoelectronics. Er3+ doped chalcogenide glasses were prepared by using vertical furnace with an argon gas atmosphere. For the structural and spectroscopic measurements, thin films at about 460nm thicknesses were deposited by using radio-frequency (RF) magnetron sputtering technique. Er3+ deposited thin films were annealed at different temperature as 450, 500, 550, and 600 degrees C in the tube furnace and rapid thermal annealer (RTA) at 2 degrees C/min, and 10 degrees C/min heating rate, respectively. As a result, absorptions, luminescence, and structural properties of the Er3+ ion doped GLS thin films were affected from different annealing process.en_US
dc.identifier.isbn978-1-5090-2439-1
dc.identifier.issn2378-8593
dc.identifier.urihttps://hdl.handle.net/20.500.14619/8444
dc.identifier.wosWOS:000390432600120en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherIeeeen_US
dc.relation.ispartof2016 5th International Symposium On Next-Generation Electronics (Isne)en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectChalcogenideen_US
dc.subjectthin filmsen_US
dc.subjectwaveguideen_US
dc.subjectphotolitoghraphyen_US
dc.titleEr3+ doped chalcogenide glasses and sputtered thin films: structural and spectroscopic characterizationen_US
dc.typeConference Objecten_US

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