Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer

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dc.authoridTascioglu, Ilke/0000-0001-9563-4396
dc.contributor.authorTascioglu, Ilke
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorYakuphanoglu, Fahrettin
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T15:51:28Z
dc.date.available2024-09-29T15:51:28Z
dc.date.issued2018
dc.departmentKarabük Üniversitesien_US
dc.description.abstractCurrent-conduction/transport mechanisms (CCMs or CTMs) through barrier and barrier height (BH) formation in the Al/(CdZnO)/p-Si/Al diodes, which were prepared by the sol-gel method, were examined in the range of 110-380 K. The decrease of zero-bias BH (Phi(Bo)) and increase of ideality factor (n) with decreasing temperature were observed. The classic Richardson plot indicated two distinct linear regions that correspond to low and high temperature range (LTR and HTR), respectively. Contrary to this, the acquired Richardson constant value (A*) was much lower than its theoretical value (32 A cm(-2) K-2). Such abnormal behavior of the Phi(Bo), n and A* was attributed to the evidence of the barrier inhomogeneities, especially at low temperature. Therefore, the Phi(Bo-)n, Phi(Bo) and (n(-1) - n) versus q/2kT plots were sketched to acquire significant clues for the Gaussian distribution (GD) of the BHs at rectifier contact area with the mean BH ((Phi) over bar (Bo)) and standard deviation (sigma(so)), which also have two linear parts with distinct slopes. (Phi) over bar and sigma(so) were calculated from the slope and intercept of Phi(Bo) versus q/2kT plot as 0.802 eV and 0.066 V for LTR, 1.043 eV and 0.106 V for HTR, respectively. The (Phi) over bar (Bo) and A* were acquired by utilizing the sigma(so) values and using the Richardson plot as 0.626 eV and 14.26 A cm(-2) K-2 for LTR and 1.021 eV and 32.53 A cm(-2) K-2 for HTR, respectively. Thus, the I-V-T characteristics of the Al/(CdZnO)/p-Si/Al diodes at forward biases were successfully elucidated by the double-GD of BHs with mean BHs of 0.626 eV and 1.021 eV, respectively.en_US
dc.identifier.doi10.1007/s11664-018-6495-z
dc.identifier.endpage6066en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-85049682489en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage6059en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-018-6495-z
dc.identifier.urihttps://hdl.handle.net/20.500.14619/4096
dc.identifier.volume47en_US
dc.identifier.wosWOS:000443021000054en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCdZnO thin filmsen_US
dc.subjectcurrent-transport mechanismsen_US
dc.subjectbarrier height inhomogeneityen_US
dc.subjectdouble Gaussian distributionen_US
dc.titleEffectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayeren_US
dc.typeArticleen_US

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