Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact

Basit Öğe Kaydı
dc.authoridKaymaz, Ahmet/0000-0003-2262-1599
dc.contributor.authorKaymaz, Ahmet
dc.contributor.authorBaydilli, Esra Evcin
dc.contributor.authorTecimer, Hueseyin
dc.contributor.authorTecimer, Habibe Uslu
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T16:00:28Z
dc.date.available2024-09-29T16:00:28Z
dc.date.issued2023
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn this study, the GaAs-based metal-semiconductor (MS) contact was prepared as a reference sample for com-parison with other devices in the literature, especially some interfacial layered Schottky structures and tem-perature sensors. The study also includes investigating and evaluating essential device parameters for determining current-transport mechanisms (CTMs) and temperature-sensing behavior. In fact, the benefits of the insulator/organic interfacial layer in devices, such as controlling charge transfers and preventing diffusion at the MS interface, have been mentioned a lot in the literature. However, since the production processes of the MS contact are easier and less costly than interfacial-layered devices, it would be more logical/suitable to prefer it in applications where this device may be sufficient, especially as a temperature sensor. Therefore, the current-voltage (I-V) data of the produced MS contact was obtained in a wide temperature range to determine the CTMs, and it was observed that two linear areas with different slopes, known as the two-parallel diode model, existed in the GaAs-based MS contact. Therefore, essential contact parameters and graphs were obtained for both two regions, and it was obtained that quantum mechanical tunneling mechanisms, the T0 effect, and the Double Gaussian Distribution (DGD) with Thermionic Emission theory play a role as CTMs of the GaAs-based MS contact such as some interfacial layered devices given in the literature. On the other hand, the temperature sensitivity of the MS contact was examined, and it was observed that the sensitivity parameter values exhibit an excellent quality sensing behavior compared to other devices in the literature, including devices with high-temperature sensitivity. Therefore, it can be preferred as a temperature sensor in many applications due to its low cost and easy production processes.en_US
dc.identifier.doi10.1016/j.mtcomm.2023.106380
dc.identifier.issn2352-4928
dc.identifier.scopus2-s2.0-85161715551en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.mtcomm.2023.106380
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5168
dc.identifier.volume35en_US
dc.identifier.wosWOS:001042574500001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMaterials Today Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGaAs-based devicesen_US
dc.subjectMS contactsen_US
dc.subjectCurrent-transport mechanisms (CTMs)en_US
dc.subjectTemperature sensorsen_US
dc.subjectDouble Gaussian distributionen_US
dc.subjectDeviation from TEen_US
dc.titleDetermination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contacten_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu