Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements

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dc.authoridKaymaz, Ahmet/0000-0003-2262-1599
dc.authoridEVCIN BAYDILLI, Esra/0000-0001-8582-5041
dc.contributor.authorKaymaz, Ahmet
dc.contributor.authorBaydilli, Esra Evcin
dc.contributor.authorTecimer, Habibe Uslu
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorAzizian-Kalandaragh, Yashar
dc.date.accessioned2024-09-29T16:00:37Z
dc.date.available2024-09-29T16:00:37Z
dc.date.issued2021
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn this study, Al/(ZnO-PVA)/p-Si (MPS) type Schottky diodes (SDs) were produced and the radiation effects on their electrical properties were investigated using the current-voltage (I?V) measurements. The I?V measurements were performed before irradiation and after various irradiation doses in the wide voltage range (?4 V) at room temperature. To determine gamma-irradiation effects on the MPS-type SDs accurately, one SD was preferred as a sample, and its significant electrical parameters such as zero-bias barrier height (?B0), ideality factor (n), and reverse-saturation-current (I0) were calculated using the linear parts of the ln(I)?V characteristics. Besides, to observe the effects of gamma-rays on MPS-type SDs in different voltage regions, some diode parameters were obtained by different calculation methods such as Cheung and Norde functions as well as Thermionic Emission (TE) theory. The calculations showed that high doses of gamma-irradiation (>5 kGy) caused the annealing effect, which leads to an improvement in some electrical parameters of SD, especially in the high electric field region. On the other hand, the energy distribution of the surface states (Nss) was obtained by utilizing the voltage-dependent ideality factor and the effective barrier height, with and without considering the series resistance (Rs) effect. It was observed that Nss values decreased almost as exponentially from the mid-band gap of the semiconductor towards the upper edge of the valance-band. Also, the density of surface states decreased with increasing radiation doses. As a result, almost all diode parameters are affected by irradiation. However, no significant defect has been detected that would affect the stable operation of the diode. Hence, Al/ (ZnO-PVA)/p-Si type SD can be used as an MPS-type detector instead of MIS/MOS-type detectors due to some advantages of the organic/polymer interlayer such as being cheap, light per molecule, flexible and requiring low energy consumption.en_US
dc.description.sponsorshipProjects of Scientific Investigation (BAP), Gazi University, Ankara, Turkey [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipThis study was supported by Projects of Scientific Investigation (BAP), Gazi University, Ankara, Turkey. Project Number: GU-BAP.05/2019-26.en_US
dc.identifier.doi10.1016/j.radphyschem.2021.109430
dc.identifier.issn0969-806X
dc.identifier.issn1879-0895
dc.identifier.scopus2-s2.0-85102340355en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.radphyschem.2021.109430
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5247
dc.identifier.volume183en_US
dc.identifier.wosWOS:000644177000002en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofRadiation Physics and Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAlen_US
dc.subject(ZnO-PVA)en_US
dc.subjectp-Si type Schottky diodesen_US
dc.subjectOrganicen_US
dc.subjectpolymer interlayeren_US
dc.subjectGamma-irradiation effecten_US
dc.subjectAnnealing effecten_US
dc.subjectEnergy distribution of the surface statesen_US
dc.titleEvaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurementsen_US
dc.typeArticleen_US

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