Dielectric characterization of BSA doped-PANI interlayered metal-semiconductor structures

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dc.authoridUslu Tecimer, Habibe/0000-0002-0094-7427
dc.contributor.authorKaraoglan, Nursel
dc.contributor.authorTecimer, Habibe Uslu
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorBindal, Cuma
dc.date.accessioned2024-09-29T15:51:16Z
dc.date.available2024-09-29T15:51:16Z
dc.date.issued2019
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe measured capacitance and conductance-voltage (C & G/omega-V) data between 1 and 200 kHz of Al/(BSA-doped-PANI)/p-InP structure were examined to uncover real and imaginary components of complex permittivity (epsilon* = epsilon ' - j epsilon ''), loss tangent (tan delta), complex electric modulus (M* = M ' + jM ''), and electrical conductivity (sigma). It was uncovered that dielectric constant (epsilon '), dielectric loss (epsilon ''), tan delta, real and imaginary components (M ' and M '') show a big dispersive behavior at low frequencies due to the oriental and the interfacial polarizations, as well as the surface states (N-ss) and the BSA doped-PANI interlayer. Such behavior in epsilon ', epsilon '', and tan delta, behavior with frequency was also explained by Maxwell-Wagner relaxation. The values of sigma are almost constant at lower-intermediate frequencies, but they start increase at high frequencies which are corresponding to the dc and ac conductivity, respectively. The values of M ' and M '' are lower in the low frequency zone and they become increase with increasing frequency at accumulation region due to the short-range charge carriers mobility. Ultimately, dielectric parameters and electric modulus alteration with frequency is the consequence of surface states and relaxation phenomena.en_US
dc.description.sponsorshipKarabuk University Scientific Research Project Uniten_US
dc.description.sponsorshipThis work was supported by the Karabuk University Scientific Research Project Unit under Contract No: KBU BAP-17-DS-409. The authors would like to thank to the Karabuk University Scientific Research Project Unit for their financial support.en_US
dc.identifier.doi10.1007/s10854-019-01791-2
dc.identifier.endpage14232en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue15en_US
dc.identifier.scopus2-s2.0-85068840029en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage14224en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01791-2
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3982
dc.identifier.volume30en_US
dc.identifier.wosWOS:000478863500041en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInterfacial Layeren_US
dc.subjectSchottky Diodesen_US
dc.subjectAc Conductivityen_US
dc.subjectPolyanilineen_US
dc.subjectVoltageen_US
dc.subjectTemperatureen_US
dc.subjectRelaxationen_US
dc.subjectFrequencyen_US
dc.subjectNanocompositesen_US
dc.subjectCapacitanceen_US
dc.titleDielectric characterization of BSA doped-PANI interlayered metal-semiconductor structuresen_US
dc.typeArticleen_US

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