Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor

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dc.contributor.authorAnutgan, Tamila (Aliyeva)
dc.contributor.authorAnutgan, Mustafa
dc.contributor.authorAtilgan, Ismail
dc.contributor.authorKatircioglu, Bayram
dc.date.accessioned2024-09-29T16:00:52Z
dc.date.available2024-09-29T16:00:52Z
dc.date.issued2011
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe capacitance-voltage (C-V) measurements within 10(6)-10(-2) Hz frequency range were performed on the hydrogenated nanocrystalline silicon (nc-Si:H) bottom-gate thin film transistor (TFT) and metal-insulator-amorphous silicon (MIAS) structure, mechanically isolated from the same TFT. It was found that the conducting thin layer in nc-Si:H film expands the effective capacitor area beyond the electrode in the TFT structure, which complicates its C-V curves. Considering the TFT capacitance-frequency (C-F) curves, the equivalent circuit of the TFT structure was proposed and mechanism for this area expansion was discussed. On the other hand, the MIAS C-F curves were fitted by the equivalent circuit models to deduce its electrical properties. nc-Si:H neutral bulk effect was revealed by the dependence of the MIAS capacitance on frequency within 10(6)-10(3) Hz at both accumulation and depletion regimes. The inversion in MIAS was detected at 10(2)-10(-2) Hz for relatively low negative gate bias without any external activation source. The presence of the ac hopping conductivity in the nc-Si:H film was inferred from the fitting. In addition, the density of the interface traps and its energy distribution were determined. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTurkish Scientific and Technical Research Council (TUBITAK-BIDEB); Middle East Technical University (METU-LTP)en_US
dc.description.sponsorshipThe authors acknowledge the Turkish Scientific and Technical Research Council (TUBITAK-BIDEB) and the Middle East Technical University (METU-LTP) for the financial support during this work.en_US
dc.identifier.doi10.1016/j.tsf.2011.01.284
dc.identifier.endpage3921en_US
dc.identifier.issn0040-6090
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-79952736800en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage3914en_US
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2011.01.284
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5411
dc.identifier.volume519en_US
dc.identifier.wosWOS:000289333400084en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHydrogenated nanocrystalline siliconen_US
dc.subjectThin film transistoren_US
dc.subjectMetal-insulator-amorphous siliconen_US
dc.subjectCapacitanceen_US
dc.subjectInversionen_US
dc.subjectHopping conductivityen_US
dc.titleCapacitance analyses of hydrogenated nanocrystalline silicon based thin film transistoren_US
dc.typeArticleen_US

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