Electroforming of Amorphous Silicon Nitride Heterojunction pin Visible Light Emitter

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dc.contributor.authorAnutgan, Mustafa
dc.contributor.authorAnutgan, Tamila
dc.contributor.authorAtilgan, Ismail
dc.contributor.authorKatircioglu, Bayram
dc.date.accessioned2024-09-29T16:04:30Z
dc.date.available2024-09-29T16:04:30Z
dc.date.issued2011
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe deposition parameters of doped hydrogenated nanocrystalline silicon grown by plasma-enhanced chemical vapor deposition were scanned to obtain highly conductive films. The optimized p(+) and n(+) nc-Si: H films were used as injecting layers in the fabrication of Si-rich hydrogenated amorphous silicon nitride (a-SiN(x) : H)-based heterojunction p(+) in(+) diode. The as-grown diode was subjected to a Joule-heating-assisted forming process (FP) via the application of a high electric field. The modifications in the luminescent, electrical, and structural properties of the diode subsequent to the FP were investigated. Although the energy distribution of electroluminescence remains almost the same when compared with that of the fresh diode, its intensity is enhanced by at least 30 times with an orange-red emission easily perceived by the naked eye. Parallelly, the low field-current density drastically increases, presumably due to the Si-nanocrystallite formation within the a-SiN(x) : H layer. This formation, triggered by the neighboring nanocrystalline-doped layers, was confirmed by the X-ray diffraction measurements indicating the rise in the local temperature during FP.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey; Middle East Technical University [METU BAP-07. 02.2010.00.01]en_US
dc.description.sponsorshipManuscript received January 11, 2011; revised March 28, 2011 and May 6, 2011; accepted May 7, 2011. Date of publication June 23, 2011; date of current version July 22, 2011. This work was supported in part by The Scientific and Technological Research Council of Turkey and in part by the Middle East Technical University Scientific Research Project under Grant METU BAP-07. 02.2010.00.01. The review of this paper was arranged by Editor V. R. Rao.en_US
dc.identifier.doi10.1109/TED.2011.2156409
dc.identifier.endpage2543en_US
dc.identifier.issn0018-9383
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-79960839884en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage2537en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2011.2156409
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6165
dc.identifier.volume58en_US
dc.identifier.wosWOS:000293708500042en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Electron Devicesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAmorphous silicon nitrideen_US
dc.subjectdoped nanocrystalline siliconen_US
dc.subjectelectroformingen_US
dc.subjectp(+)in(+) diodeen_US
dc.subjectvisible electroluminescenceen_US
dc.titleElectroforming of Amorphous Silicon Nitride Heterojunction pin Visible Light Emitteren_US
dc.typeArticleen_US

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