Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

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dc.contributor.authorAnutgan, Mustafa
dc.contributor.authorAnutgan, Tamila (Aliyeva)
dc.contributor.authorAtilgan, Ismail
dc.contributor.authorKatircioglu, Bayram
dc.date.accessioned2024-09-29T15:57:40Z
dc.date.available2024-09-29T15:57:40Z
dc.date.issued2011
dc.departmentKarabük Üniversitesien_US
dc.description.abstractSilicon-rich hydrogenated amorphous silicon nitride (a-SiNx:H) films were grown by plasma enhanced chemical vapor deposition (PECVD) with different r=NH3/SiH4 gas flow ratios. The optical absorption characteristics were analyzed by Fourier transform infrared (FTIR) and UV-visible transmittance spectroscopies. The recombination properties were investigated via photoluminescence (PL) measurements. As r was increased from 2 to 9, the PL emission color could be adjusted from red to blue with the emission intensity high enough to be perceived by naked eye at room temperature. The behaviors of the PL peak energy and the PL band broadness with respect to the optical constants were discussed in the frame of electron-phonon coupling and band tail recombination models. A semiquantitative analysis supported the band tail recombination model, where the recombination was found to be favored when the carriers thermalize to an energy level at which the band tail density of states (DOS) reduces to some fraction of the relevant band edge DOS. For the PL efficiency comparison of the samples with different nitrogen contents, the PL intensity was corrected for the absorbed intensity fraction of the incident PL excitation source. The resulted correlation between the PL efficiency and the subgap absorption tail width further supported the band tail recombination model. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK); Middle East Technical University (METU)en_US
dc.description.sponsorshipThe authors acknowledge financial support of The Scientific and Technological Research Council of Turkey (TUBITAK) and Middle East Technical University (METU).en_US
dc.identifier.doi10.1016/j.jlumin.2011.03.014
dc.identifier.endpage1311en_US
dc.identifier.issn0022-2313
dc.identifier.issn1872-7883
dc.identifier.issue7en_US
dc.identifier.scopus2-s2.0-79953240133en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1305en_US
dc.identifier.urihttps://doi.org/10.1016/j.jlumin.2011.03.014
dc.identifier.urihttps://hdl.handle.net/20.500.14619/4929
dc.identifier.volume131en_US
dc.identifier.wosWOS:000291132900011en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofJournal of Luminescenceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHydrogenated amorphous silicon nitrideen_US
dc.subjectFTIRen_US
dc.subjectUV-visible transmittanceen_US
dc.subjectPhotoluminescenceen_US
dc.subjectBand tail recombinationen_US
dc.titlePhotoluminescence analyses of hydrogenated amorphous silicon nitride thin filmsen_US
dc.typeArticleen_US

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