Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage
dc.authorid | Turk, Cagri Gokhan/0000-0001-9940-6948 | |
dc.contributor.author | Turk, Cagri Gokhan | |
dc.contributor.author | Tan, Serhat Orkun | |
dc.contributor.author | Altindal, Semsettin | |
dc.contributor.author | Inem, Burhanettin | |
dc.date.accessioned | 2024-09-29T16:00:31Z | |
dc.date.available | 2024-09-29T16:00:31Z | |
dc.date.issued | 2020 | |
dc.department | Karabük Üniversitesi | en_US |
dc.description.abstract | In this study, Al/Al2O3/p-Si (MIS) type structures were fabricated and then the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature. For this purpose, capacitance/ conductance-voltage-frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (+/- 3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters. Experimental results indicate that C and G/omega values are strong function of frequency and voltage particularly in the regions of accumulation and depletion. Calculating from the interception and slope of C-2-V plot, the doping acceptor atoms (N-A), BH and depletion layer width (W-D) were obtained for each frequency, respectively. Both BH and W-D values exponentially increase by frequency increment. Nicollian-Brews method were used to extract voltage dependence profiles of R-s and frequency from C and G data. | en_US |
dc.description.sponsorship | Gazi University Scientific Research Project [GU-BAP.05/2019-26] | en_US |
dc.description.sponsorship | This study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019-26). | en_US |
dc.identifier.doi | 10.1016/j.physb.2019.411979 | |
dc.identifier.issn | 0921-4526 | |
dc.identifier.issn | 1873-2135 | |
dc.identifier.scopus | 2-s2.0-85078198949 | en_US |
dc.identifier.scopusquality | Q2 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.physb.2019.411979 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14619/5199 | |
dc.identifier.volume | 582 | en_US |
dc.identifier.wos | WOS:000517950500016 | en_US |
dc.identifier.wosquality | Q3 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartof | Physica B-Condensed Matter | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Electrical data | en_US |
dc.subject | Conduction mechanism | en_US |
dc.subject | Series resistance | en_US |
dc.subject | Surface states | en_US |
dc.title | Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage | en_US |
dc.type | Article | en_US |