Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage

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dc.authoridTurk, Cagri Gokhan/0000-0001-9940-6948
dc.contributor.authorTurk, Cagri Gokhan
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorInem, Burhanettin
dc.date.accessioned2024-09-29T16:00:31Z
dc.date.available2024-09-29T16:00:31Z
dc.date.issued2020
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn this study, Al/Al2O3/p-Si (MIS) type structures were fabricated and then the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature. For this purpose, capacitance/ conductance-voltage-frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (+/- 3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters. Experimental results indicate that C and G/omega values are strong function of frequency and voltage particularly in the regions of accumulation and depletion. Calculating from the interception and slope of C-2-V plot, the doping acceptor atoms (N-A), BH and depletion layer width (W-D) were obtained for each frequency, respectively. Both BH and W-D values exponentially increase by frequency increment. Nicollian-Brews method were used to extract voltage dependence profiles of R-s and frequency from C and G data.en_US
dc.description.sponsorshipGazi University Scientific Research Project [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipThis study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019-26).en_US
dc.identifier.doi10.1016/j.physb.2019.411979
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85078198949en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2019.411979
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5199
dc.identifier.volume582en_US
dc.identifier.wosWOS:000517950500016en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectrical dataen_US
dc.subjectConduction mechanismen_US
dc.subjectSeries resistanceen_US
dc.subjectSurface statesen_US
dc.titleFrequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltageen_US
dc.typeArticleen_US

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