Electroforming of thin film silicon based homojunction pin diode

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dc.contributor.authorAnutgan, M.
dc.contributor.authorAnutgan, T.
dc.contributor.authorAtilgan, I.
dc.contributor.authorKatircioglu, B.
dc.date.accessioned2024-09-29T15:51:02Z
dc.date.available2024-09-29T15:51:02Z
dc.date.issued2012
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe recent observations of bright visible electroluminescence (EL) from electroformed thin film silicon based wide-gap alloys are further clamped down in a simpler structure. For this purpose, a standard quality, ordinary hydrogenated amorphous silicon (a-Si:H) homojunction pin diode was fabricated by plasma enhanced chemical vapor deposition. The fresh diode was characterized by temperature scanned current-voltage (I-V) and constant photocurrent measurements. The energy distribution of density of states within the forbidden gap of the intrinsic a-Si:H layer was determined by space charge limited current and optical absorption spectroscopies. Then the diode was intentionally subjected to a sufficiently high, calibrated electric field leading to its Joule heating assisted rapid crystallization at ambient atmosphere. The fresh and the formed diodes exhibit different I-V and EL characteristics. The current density of the formed diode increases drastically at low voltages while remaining unchanged at high voltages when compared to that of the fresh diode. Parallelly, the room temperature EL intensity under a particular current stress is boosted with electroforming. These interesting phenomena have been discussed in the frame of a self-consistent model.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK BIDEB); Middle East Technical University Scientific Research Project [METU BAP-07.02.2010.00.01]en_US
dc.description.sponsorshipThe authors would like to acknowledge the financial support of The Scientific and Technological Research Council of Turkey (TUBITAK BIDEB) and Middle East Technical University Scientific Research Project (METU BAP-07.02.2010.00.01).en_US
dc.identifier.doi10.1007/s00339-012-7033-0
dc.identifier.endpage204en_US
dc.identifier.issn0947-8396
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-84866732935en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage197en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-012-7033-0
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3854
dc.identifier.volume109en_US
dc.identifier.wosWOS:000309224600030en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofApplied Physics A-Materials Science & Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHydrogenated Amorphous-Siliconen_US
dc.subjectA-Si-Hen_US
dc.subjectMetal-Induced-Crystallizationen_US
dc.subjectLimited Current Measurementsen_US
dc.subjectElectric-Fielden_US
dc.subjectRoom-Temperatureen_US
dc.subjectElectroluminescenceen_US
dc.subjectStatesen_US
dc.subjectDensityen_US
dc.subjectModelen_US
dc.titleElectroforming of thin film silicon based homojunction pin diodeen_US
dc.typeArticleen_US

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