Comparison of Graphene and Zinc Dopant Materials for Organic Polymer Interfacial Layer Between Metal Semiconductor Structure

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dc.contributor.authorTan, Serhat Orkun
dc.date.accessioned2024-09-29T16:04:30Z
dc.date.available2024-09-29T16:04:30Z
dc.date.issued2017
dc.departmentKarabük Üniversitesien_US
dc.description.abstractAu/n-GaAs structures with polyvinyl alcohol (PVA) organic interface layer were produced by doping graphene (Gr) and zinc (Zn) separately to the interface layer. The electrical characterizations of both structures which have Schottky barrier diodes (SBDs) property were compared both at the forward and reverse biases at room temperature using the current-voltage (I-V) data. For this purpose, the main electrical parameters such as saturation current (I-o), barrier height (Phi(Bo)), ideality factor (n), series (R-s) resistance, and shunt (R-sh) resistance are obtained for Gr doped and Zn doped Au/PVA/n-GaAs and compared by utilizing thermionic emission theory, Cheung's method and modified Norde's methods. Investigation of Rs and Rsh values at (+/- 2 V) for Gr-doped and Zn-doped structures ensured to obtain the rectifiying ratio values and give an idea to find out the better quality of these structures. Thus, the results for the comparison of polymer interlayers with different dopants show that doping with both Zn and Gr differently improved the quality of SBDs when considering the main electrical parameters.en_US
dc.identifier.doi10.1109/TED.2017.2766289
dc.identifier.endpage5127en_US
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85034264261en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage5121en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2017.2766289
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6167
dc.identifier.volume64en_US
dc.identifier.wosWOS:000417727500044en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Electron Devicesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGrapheneen_US
dc.subjectinterfacial layeren_US
dc.subjectnanocompositeen_US
dc.subjectpolymeren_US
dc.subjectpolyvinyl alcohol (PVA)en_US
dc.subjectSchottky diodeen_US
dc.titleComparison of Graphene and Zinc Dopant Materials for Organic Polymer Interfacial Layer Between Metal Semiconductor Structureen_US
dc.typeArticleen_US

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