A comparative study on electrical characteristics of Au/N-Si schottky diodes, with and without bi-doped PVA interfacial layer in dark and under illumination at room temperature

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dc.contributor.authorAlialy, S.
dc.contributor.authorTecimer, H.
dc.contributor.authorUslu, H.
dc.contributor.authorAltindal, S.
dc.date.accessioned2024-09-29T16:16:10Z
dc.date.available2024-09-29T16:16:10Z
dc.date.issued2013
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn order to see the effect of Bi-doped PVA interfacial layer on electrical characteristics, both Au/n-Si (MS) and Au/Bidoped PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) were fabricated, and their main electrical parameters were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements, in dark and under illumination at room temperature. Forward bias semi-logarithmic I-V plots of these SBDs show two distinct linear regions, with different slopes in the low and intermediate voltage region. Such behavior in I-V plots was explained by two parallel diodes model. Experimental results show that the ideality factor (n), barrier height (?b), series and shunt resistances (Rs and Rsh), and the density of interface states/traps (Nss) are strong functions of illumination level and applied bias voltage. The Rs values were determined from the I-V characteristics, by using both Ohm's law. The energy distribution profile of Nss was also obtained from the forward bias I-V characteristics, by taking into account voltage dependent barrier height (?e) and ideality factor (n). It was found that Bi-doped PVA layer lead to a considerable decrease in the leakage current, Rs and Nss and increase in Rsh and rectifier rate (RR=IF/IR). In conclusion, a thin Bi-doped PVA interfacial layer, considerably improved the diode performance, both in dark and under illumination. © 2013 Alialy S, et al.en_US
dc.identifier.doi10.4172/2157-7439.1000167
dc.identifier.issn2157-7439
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-84878071552en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.4172/2157-7439.1000167
dc.identifier.urihttps://hdl.handle.net/20.500.14619/8890
dc.identifier.volume4en_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.relation.ispartofJournal of Nanomedicine and Nanotechnologyen_US
dc.relation.publicationcategoryDiğeren_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAu/Bi-doped PVA/N-Si (MPS)en_US
dc.subjectI-V and C-V measurementsen_US
dc.subjectInterface statesen_US
dc.subjectSchottky barrier diodes (SBDS)en_US
dc.subjectSeries resistanceen_US
dc.titleA comparative study on electrical characteristics of Au/N-Si schottky diodes, with and without bi-doped PVA interfacial layer in dark and under illumination at room temperatureen_US
dc.typeReviewen_US

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