Structural analysis of hydrogenated nanocrystalline silicon thin films as a function of substrate temperature during deposition

Basit Öğe Kaydı
dc.contributor.authorAnutgan, Mustafa
dc.contributor.authorUysal, Sema
dc.contributor.authorAnutgan, Tamila
dc.date.accessioned2024-09-29T16:01:08Z
dc.date.available2024-09-29T16:01:08Z
dc.date.issued2014
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn this contribution, the micro-and macro-structure of plasma grown hydrogenated nanocrystalline silicon (nc-Si: H) thin films were followed with respect to substrate temperature (Ts) ranging from 80 degrees C to 200 degrees C. nc-Si: H films were deposited by plasma enhanced chemical vapor deposition technique using silane gas highly diluted by hydrogen and high RF power density. Micro-structure analysis was performed with grazing angle X-ray diffraction (GAXRD) and dispersive Raman spectroscopies. Parallelly, morphological properties of the films were investigated via field emission scanning electron microscopy (FE-SEM) by taking both surface and cross-sectional micrographs. GAXRD results suggest the presence of 4-5 nm nanocrystallites with the size almost independent of Ts. The detailed analysis of the Raman spectra reveals one-and two-phonon modes due to amorphous and crystalline silicon (c-Si), where all c-Si related peaks shifted to lower frequencies. Raman nanocrystalline volume fraction is found to be greater than 50% for all Ts; it increases together with the short-range order at elevated Ts. This micro-structural improvement with Ts is considered to be slight when compared to the FE-SEM-observed drastic changes of morphology, particularly the size of large conglomerates (35-250 nm). The behavior of micro-and macro-structure with Ts is correlated well with the previously determined bonding and lateral conductivity measurements. It seems to be the macro-structure that accounts for bonding and electrical properties of nc-Si: H thin films.en_US
dc.description.sponsorshipKarabuk University [KBU-BAP-C-11-YL-013]en_US
dc.description.sponsorshipThis work was financially supported by Karabuk University under the Project KBU-BAP-C-11-YL-013. The authors acknowledge also METU Central Laboratory for technical assistance.en_US
dc.identifier.doi10.1051/epjap/2013130394
dc.identifier.issn1286-0042
dc.identifier.issn1286-0050
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-84893665903en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.urihttps://doi.org/10.1051/epjap/2013130394
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5526
dc.identifier.volume65en_US
dc.identifier.wosWOS:000331892400003en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherEdp Sciences S Aen_US
dc.relation.ispartofEuropean Physical Journal-Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMicrocrystalline Siliconen_US
dc.subjectRaman-Spectroscopyen_US
dc.subjectCrystallite Sizeen_US
dc.subjectDiluted Silaneen_US
dc.subjectSolar-Cellsen_US
dc.subjectPecvden_US
dc.subjectTransporten_US
dc.subjectModelen_US
dc.titleStructural analysis of hydrogenated nanocrystalline silicon thin films as a function of substrate temperature during depositionen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu