Multi-Gaussian distribution of barrier height in diamond-like carbon interfacial-layered Schottky devices

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dc.authoridKaymaz, Ahmet/0000-0003-2262-1599
dc.contributor.authorKaymaz, Ahmet
dc.date.accessioned2024-09-29T16:00:27Z
dc.date.available2024-09-29T16:00:27Z
dc.date.issued2024
dc.departmentKarabük Üniversitesien_US
dc.description.abstractPieces of information about the physical and electronic properties of diamond -like carbon (DLC) interfaciallayered Schottky devices are crucial because DLC is known for its durability against harsh conditions such as high voltage, high temperature, and radiative environments. Therefore, this study focused on determining some critical properties of DCL interlayered Schottky devices, such as current -conduction mechanisms (CCMs) and the shape of the barrier height of the device. Some graphics, such as n- Phi B0 vs T , Phi B0 vs n , Phi B0 vs q/ 2kT, 1/n -1 vs q/ 2kT, and ln(I 0 /T 2 -(q sigma s )/2k 2 T 2 vs kT/q were obtained from the temperature -dependent current -voltage ( I - V-T ) data to determine the shape of the barrier height (BH) and to understand CCMs of this MIS -type device. Obtained results revealed that the device exhibited different behaviours in three different temperature regions: 80-170 K, 200-290 K and 320-410 K, which were called Low Temperatures (LTs), Moderate Temperatures (MTs) and High Temperatures (HTs), respectively. It was also observed that all these graphs exhibited linear behaviour separately for these three temperature regions. Therefore, these results showed that the barrier shape of this DLC interlayered Schottky device is not homogeneous, and it has a Multi -Gaussian distribution due to three different linear behaviours. On the other hand, in addition to the Thermionic Emission (TE) mechanism, it was also understood that Field Emission (FE) and Thermionic Field Emission (TFE) mechanisms, known as Quantum Mechanical Tunnelling (QMT) mechanisms, were effective current conduction mechanisms, especially at low and moderate temperatures for this device.en_US
dc.identifier.doi10.1016/j.mssp.2024.108380
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85189547279en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2024.108380
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5161
dc.identifier.volume177en_US
dc.identifier.wosWOS:001218502000001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMIS -type Schottky devicesen_US
dc.subjectBarrier shape of Schottky devicesen_US
dc.subjectDiamond -like carbon (DLC)en_US
dc.subjectMulti -Gaussian distributionen_US
dc.subjectCurrent -conduction mechanismsen_US
dc.titleMulti-Gaussian distribution of barrier height in diamond-like carbon interfacial-layered Schottky devicesen_US
dc.typeArticleen_US

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