Investigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)-zinc (Zn) doped organic interface layer

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.contributor.authorTecimer, H.
dc.contributor.authorTunc, T.
dc.contributor.authorAltindal, S.
dc.date.accessioned2024-09-29T15:51:16Z
dc.date.available2024-09-29T15:51:16Z
dc.date.issued2018
dc.departmentKarabük Üniversitesien_US
dc.description.abstractPhotovoltaic effects were tracked on both electric and dielectric properties of Au/(Ni, Zn)-doped polyvinyl alcohol/n-Si Schottky barrier diodes as function of illumination intensity by 50 W steps at 1 MHz and in the voltage interval of (- 4)-(+ 5) V. The measurements indicate that ac electrical conductivity (sigma (ac) ), dielectric constant's both real and imaginary parts (epsilon', epsilon aEuro(3)), loss tangent (tan delta) and electric modulus (M', MaEuro(3)) are highly relevant functions of illumination and voltage. The variations in depletion region can be ascribed to the charges at interface and its reordering and restructuring under illumination and electric field but then accumulation region variations can be ascribed to the interfacial layer and series resistance (R (s) ). The values of epsilon(EE1)-E-1 and tan delta show a step increase with the increasing voltage for each illumination intensity while the values of epsilon' show an anomalous peak (similar to 1.4 V). C-V plot shows an intersection behavior at about 2.2 V due to lack of enough free charges in low illumination. The values of sigma (ac) increase with increasing illumination and voltage due to the formation electron-hole pairs. The MaEuro(3) vs V have two peaks for each illumination intensity and peak value increases with increasing illumination intensity and its positions tend to shift towards low voltage region.en_US
dc.identifier.doi10.1007/s10854-017-8314-3
dc.identifier.endpage3799en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85035089091en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage3790en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-017-8314-3
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3979
dc.identifier.volume29en_US
dc.identifier.wosWOS:000424338500029en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectVoltage-Dependenceen_US
dc.subjectAlcohol Pvaen_US
dc.subjectFrequencyen_US
dc.subjectTemperatureen_US
dc.subjectConductivityen_US
dc.subjectMechanismen_US
dc.subjectConstanten_US
dc.subjectFabricationen_US
dc.subjectBehavioren_US
dc.subjectOxide)en_US
dc.titleInvestigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)-zinc (Zn) doped organic interface layeren_US
dc.typeArticleen_US

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