Electroformed silicon nitride based light emitting memory device

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dc.contributor.authorAnutgan, Tamila
dc.contributor.authorAnutgan, Mustafa
dc.contributor.authorAtilgan, Ismail
dc.contributor.authorKatircioglu, Bayram
dc.date.accessioned2024-09-29T16:01:10Z
dc.date.available2024-09-29T16:01:10Z
dc.date.issued2017
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED. Published by AIP Publishing.en_US
dc.description.sponsorshipKarabuk University (SRP) [KBU-BAP-16/2-YD-056]; Middle East Technical University Technology Transfer Officeen_US
dc.description.sponsorshipThe authors acknowledge the support from Karabuk University (SRP Project No. KBU-BAP-16/2-YD-056) and Middle East Technical University Technology Transfer Office.en_US
dc.identifier.doi10.1063/1.4997029
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85027358000en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1063/1.4997029
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5564
dc.identifier.volume111en_US
dc.identifier.wosWOS:000406782300022en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDiodeen_US
dc.titleElectroformed silicon nitride based light emitting memory deviceen_US
dc.typeArticleen_US

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