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    Bright Visible Light Extraction from Amorphous Silicon Nitride Heterojunction Pin Diode
    (Electrochemical Soc Inc, 2011) Anutgan, T. A.; Anutgan, M.; Atilgan, I.; Katircioglu, B.
    We report the transformation of an ordinary hydrogenated amorphous silicon nitride based heterojunction pin diode into a strong visible light emitting electroluminescent device. This forming process (FP) comprises Joule heating induced crystallization during the application of sufficiently high forward bias to the fresh diode. FP starts at an arbitrary point and continues until the accompanying visible light is uniformly emitted from the whole diode. This remarkable phenomenon is presented by real-time photography of the lateral propagation of the formed region. Finally, both the role of window electrode for a successful FP and the luminescence mechanism after FP are briefly discussed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3592232] All rights reserved.
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    Electroforming of thin film silicon based homojunction pin diode
    (Springer, 2012) Anutgan, M.; Anutgan, T.; Atilgan, I.; Katircioglu, B.
    The recent observations of bright visible electroluminescence (EL) from electroformed thin film silicon based wide-gap alloys are further clamped down in a simpler structure. For this purpose, a standard quality, ordinary hydrogenated amorphous silicon (a-Si:H) homojunction pin diode was fabricated by plasma enhanced chemical vapor deposition. The fresh diode was characterized by temperature scanned current-voltage (I-V) and constant photocurrent measurements. The energy distribution of density of states within the forbidden gap of the intrinsic a-Si:H layer was determined by space charge limited current and optical absorption spectroscopies. Then the diode was intentionally subjected to a sufficiently high, calibrated electric field leading to its Joule heating assisted rapid crystallization at ambient atmosphere. The fresh and the formed diodes exhibit different I-V and EL characteristics. The current density of the formed diode increases drastically at low voltages while remaining unchanged at high voltages when compared to that of the fresh diode. Parallelly, the room temperature EL intensity under a particular current stress is boosted with electroforming. These interesting phenomena have been discussed in the frame of a self-consistent model.
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    Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode
    (Amer Inst Physics, 2013) Anutgan, M.; Atilgan, I.
    The anomalous capacitance-frequency (C-f) behavior of hydrogenated amorphous silicon (a-Si:H) p-i-n diode is studied under different forward bias voltages. Instead of the negative capacitance part of the spectra, the positive part is analyzed, where the traditional charge modulation rather than their transport or their recombination dominates the reactive current. Since the physics of the charge modulation under a particular bias is directly related to the depth and the density of the relevant gap states, the forward bias voltage scanned C-f curves are used to estimate the energy distribution of the density of states within the forbidden gap. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802275]
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    Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode
    (Taylor & Francis Ltd, 2013) Anutgan, M.; Anutgan, T.; Atilgan, I.; Katircioglu, B.
    Hydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and field dependence of thermal activation energy were discussed. EL characteristics were studied using the spectral energy distribution and the injection current dependence of its intensity. Thermal quenching data of EL and photoluminescence intensities were compared. Finally, the relationship between the electrical transport and luminescence phenomena was attempted to be interpreted within the frame of a self-consistent model.