Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode

Küçük Resim Yok

Tarih

2013

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Amer Inst Physics

Erişim Hakkı

info:eu-repo/semantics/openAccess

Özet

The anomalous capacitance-frequency (C-f) behavior of hydrogenated amorphous silicon (a-Si:H) p-i-n diode is studied under different forward bias voltages. Instead of the negative capacitance part of the spectra, the positive part is analyzed, where the traditional charge modulation rather than their transport or their recombination dominates the reactive current. Since the physics of the charge modulation under a particular bias is directly related to the depth and the density of the relevant gap states, the forward bias voltage scanned C-f curves are used to estimate the energy distribution of the density of states within the forbidden gap. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802275]

Açıklama

Anahtar Kelimeler

Hydrogenated Amorphous-Silicon, Limited Current Measurements, Light-Emitting Diode, Solar-Cells, Negative Capacitance, Voltage Characteristics, Gap States, Thin-Films, Admittance, Density

Kaynak

Applied Physics Letters

WoS Q Değeri

Q1

Scopus Q Değeri

Q1

Cilt

102

Sayı

15

Künye