Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode
Küçük Resim Yok
Tarih
2013
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Inst Physics
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
The anomalous capacitance-frequency (C-f) behavior of hydrogenated amorphous silicon (a-Si:H) p-i-n diode is studied under different forward bias voltages. Instead of the negative capacitance part of the spectra, the positive part is analyzed, where the traditional charge modulation rather than their transport or their recombination dominates the reactive current. Since the physics of the charge modulation under a particular bias is directly related to the depth and the density of the relevant gap states, the forward bias voltage scanned C-f curves are used to estimate the energy distribution of the density of states within the forbidden gap. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802275]
Açıklama
Anahtar Kelimeler
Hydrogenated Amorphous-Silicon, Limited Current Measurements, Light-Emitting Diode, Solar-Cells, Negative Capacitance, Voltage Characteristics, Gap States, Thin-Films, Admittance, Density
Kaynak
Applied Physics Letters
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
102
Sayı
15
