Yazar "Maril, Elif" seçeneğine göre listele

Listeleniyor 1 - 3 / 3
  • Küçük Resim Yok
    Öğe
    The effect of (PVP-Cu2Te) organic interlayer on the electrical parameters of Al/p-Si Schottky barrier diodes (SBDs) at room temperature
    (Elsevier, 2021) Maril, Elif
    In the presented study, firstly the microstructural features of the PVP-Cu2Te interlayer was evaluated by employing XRD and SEM approaches and the PVP-Cu2Te is formed on the p-Si wafer. Secondly, both the forward and reverse biases current-voltage and capacitance/conductance-frequency characteristics of the prepared Al/pSi (MS) and Al/(PVP-Cu2Te)/p-Si (MPS) structures have been analyzed to compare the organic interlayer effect. Basic electrical parameters for reverse-saturation current (I-o), ideality factor (n), and zero-bias BH (Phi(Bo)) were calculated as 2.3 x 10(-6) A, 2.38, and 0.576 eV for MS and 2.2 x 10(-8) A, 1.85, and 0.692 eV for MPS structures, respectively. Apparently, Io value for MPS is almost two order lower than MS structure. Besides, organic interlayer usage enhances the performance of MPS structure in respect of high BH, high-rectifying ratio, low-series (R-s) resistance, and low-leakage current. When the experimental and theoretical field-lowering coefficients compared, Poole-Frenkel emission (PFE) is dominated for two structures at reverse bias zone.
  • Küçük Resim Yok
    Öğe
    The effects of (Bi2Te3-Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)
    (Elsevier, 2020) Altindal, Semsettin; Farazin, Javid; Pirgholi-Givi, Gholamreza; Maril, Elif; Azizian-Kalandaragh, Yashar
    The influence of the inorganic/organic interfacial layer on the electric and dielectric performance of both Al/p-Si (MS) and Al/(Bi2Te3- Bi2O3- TeO2- PVP)/p-Si (MPS) type SBDs have been investigated. The material for the interfacial layer has been synthesized by the ultrasound-assisted method. FE-SEM, XRD, EDS, and UV-Vis techniques have been used for structural and optical characteristics of the prepared sample. The main electrical, dielectric, and electrical modulus parameters of these SBDs were obtained from the I-V and impedance spectroscopy measurements and using different calculation methods. The surface states (N-ss) have been calculated. The real and imaginary components of the permittivity (epsilon* = epsilon'-j epsilon ''), complex modulus (M* = M' +jM ''), dielectric loss tangent, and conductivity (sigma(ac)) values were also calculated from the (C/G-f) measurements in the wide range of frequency(100Hz-1MHz). We observed that (Bi2Te3-Bi2O3-TeO2-PVP) interlayer may be a good alternative to the low-dielectric insulator prepared by traditional methods.
  • Küçük Resim Yok
    Öğe
    Evaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer
    (Ieee-Inst Electrical Electronics Engineers Inc, 2018) Maril, Elif; Tan, Serhat Orkun; Altindal, Semsettin; Uslu, Ibrahim
    Electrical and dielectric properties of Au/n-Si metal-semiconductor structures with high dielectric have been examined by capacitance/conductance-voltage (C/G-V) measurements in the frequency range of 5-500 kHz at room temperature. Voltage-dependent profiles of interface states (N-ss) and resistance (R-i) were extracted from the C and G data using the low-high-frequency capacitance and Nicollian-Brews methods, respectively. The real and imaginary components of the complex dielectric constant (epsilon', epsilon ''), electric modulus (M' and M ''), and ac conductivity (sigma(ac)) were calculated from the C and G data. All parameters have a strong relation with frequency and voltage, especially at low frequencies due to Maxwell-Wagner relaxation and N-ss. The observed peaks in the N-ss-V and R-i-V plots can be ascribed by the special distribution of N-ss at M/S interface. These results confirmed that [2% graphene cobalt-doped (Ca3CO4Ga0.001Ox] interlayer has high-dielectric constant and can be used an interlayer instead of the traditional SiO2 at M/S interface to increase their capacitance or more charges/energy storage and reduce both the values of N-ss and series resistance (R-s). The values of a are almost constant at lower-intermediate frequencies, but they start to increase at high frequencies that are corresponding to the dc and ac conductivity, respectively.