Evaluation of Electric and Dielectric Properties of Metal-Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer
Küçük Resim Yok
Tarih
2018
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee-Inst Electrical Electronics Engineers Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Electrical and dielectric properties of Au/n-Si metal-semiconductor structures with high dielectric have been examined by capacitance/conductance-voltage (C/G-V) measurements in the frequency range of 5-500 kHz at room temperature. Voltage-dependent profiles of interface states (N-ss) and resistance (R-i) were extracted from the C and G data using the low-high-frequency capacitance and Nicollian-Brews methods, respectively. The real and imaginary components of the complex dielectric constant (epsilon', epsilon ''), electric modulus (M' and M ''), and ac conductivity (sigma(ac)) were calculated from the C and G data. All parameters have a strong relation with frequency and voltage, especially at low frequencies due to Maxwell-Wagner relaxation and N-ss. The observed peaks in the N-ss-V and R-i-V plots can be ascribed by the special distribution of N-ss at M/S interface. These results confirmed that [2% graphene cobalt-doped (Ca3CO4Ga0.001Ox] interlayer has high-dielectric constant and can be used an interlayer instead of the traditional SiO2 at M/S interface to increase their capacitance or more charges/energy storage and reduce both the values of N-ss and series resistance (R-s). The values of a are almost constant at lower-intermediate frequencies, but they start to increase at high frequencies that are corresponding to the dc and ac conductivity, respectively.
Açıklama
Anahtar Kelimeler
Dielectric properties, electrical properties, graphene, nanostructures, polymer
Kaynak
Ieee Transactions On Electron Devices
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
65
Sayı
9
