Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities
Küçük Resim Yok
Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The Au/ZnO/n-GaAs Schottky barrier diode was fabricated and examined regarding to its current-voltage characteristics under distinct illumination intensities at room temperature. The reverse biased current increases with increasing illumination level while forward biased current is almost unchanged with illumination which states that the fabricated diodes exhibit photosensitive character or photodiode behavior. Hence, the shunt resistance is decreased with illumination while the series resistance is almost remained constant. The increment in the ideality factor after illumination can be ascribed to the assumption of inhomogeneities at M/S interface. Considering the ideality factor and the voltage dependent effective barrier height, the energy distribution profiles of surface states (Nss) were formed by the forward bias current-voltage data and increased with increasing illumination level. The Nss values acquired by considering series resistance are lower than those acquired by ignoring series resistance. Consequently, surface states can serve as recombination centers and have great importance especially in reverse bias current-voltage characteristics.
Açıklama
Anahtar Kelimeler
Current-Voltage Characteristics, Barrier Diodes, Series Resistance, Temperature-Range, V Characteristics, Interface States, Au/N-Gaas, I-V, Photovoltaic Characteristics, Dielectric-Properties
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
27
Sayı
8
