Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities

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dc.authoridUslu Tecimer, Habibe/0000-0002-0094-7427
dc.authoridCICEK, OSMAN/0000-0002-2765-4165
dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.contributor.authorTan, S. O.
dc.contributor.authorTecimer, H. Uslu
dc.contributor.authorCicek, O.
dc.contributor.authorTecimer, H.
dc.contributor.authorOrak, I.
dc.contributor.authorAltindal, S.
dc.date.accessioned2024-09-29T15:51:15Z
dc.date.available2024-09-29T15:51:15Z
dc.date.issued2016
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe Au/ZnO/n-GaAs Schottky barrier diode was fabricated and examined regarding to its current-voltage characteristics under distinct illumination intensities at room temperature. The reverse biased current increases with increasing illumination level while forward biased current is almost unchanged with illumination which states that the fabricated diodes exhibit photosensitive character or photodiode behavior. Hence, the shunt resistance is decreased with illumination while the series resistance is almost remained constant. The increment in the ideality factor after illumination can be ascribed to the assumption of inhomogeneities at M/S interface. Considering the ideality factor and the voltage dependent effective barrier height, the energy distribution profiles of surface states (Nss) were formed by the forward bias current-voltage data and increased with increasing illumination level. The Nss values acquired by considering series resistance are lower than those acquired by ignoring series resistance. Consequently, surface states can serve as recombination centers and have great importance especially in reverse bias current-voltage characteristics.en_US
dc.description.sponsorshipScientific Research Project (BAP) Coordinatorship of Karabuk University [KBU-BAP-14/2-DR-005, KBU-BAP-14/2-DR006]en_US
dc.description.sponsorshipThis study has been funded by Scientific Research Project (BAP) Coordinatorship of Karabuk University with Project Codes of KBU-BAP-14/2-DR-005 and KBU-BAP-14/2-DR006.en_US
dc.identifier.doi10.1007/s10854-016-4843-4
dc.identifier.endpage8347en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-84964403162en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage8340en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-016-4843-4
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3971
dc.identifier.volume27en_US
dc.identifier.wosWOS:000379803200083en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCurrent-Voltage Characteristicsen_US
dc.subjectBarrier Diodesen_US
dc.subjectSeries Resistanceen_US
dc.subjectTemperature-Rangeen_US
dc.subjectV Characteristicsen_US
dc.subjectInterface Statesen_US
dc.subjectAu/N-Gaasen_US
dc.subjectI-Ven_US
dc.subjectPhotovoltaic Characteristicsen_US
dc.subjectDielectric-Propertiesen_US
dc.titleElectrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensitiesen_US
dc.typeArticleen_US

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