Photoanodic properties of In/ß-Ga2O3 nanostructures fabricated under hydrogen reducing ambient by the vapour-phase growth method

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dc.contributor.authorJubu, Peverga R.
dc.contributor.authorDanladi, E.
dc.contributor.authorChahul, H. F.
dc.contributor.authorAldayyat, A.
dc.contributor.authorYusof, Y.
dc.contributor.authorChahrour, Khaled M.
dc.contributor.authorKyesmen, P. I.
dc.date.accessioned2024-09-29T16:00:29Z
dc.date.available2024-09-29T16:00:29Z
dc.date.issued2023
dc.departmentKarabük Üniversitesien_US
dc.description.abstractA great deal of efforts have been dedicated to reduce carrier recombination problem in ss-Ga2O3 using strategies, such as doping, compositing, and interfacing with different materials to enhance device performance. However, reports are rarely available for integrating In with ss-Ga2O3 for photoelectrochemical applications. Herein, we reports the effect of In addition in ss-Ga2O3 to produce In/ ss-Ga2O3 nanocomposite for photoelectrocatalysis. The intrinsic sample exhited mixed-phase (a-ss)-Ga2O3, whereas the composite showed a mixed-phase ss-Ga2O3-in-dium. A significant amount of In was detected on the heterogenous film, suggesting that doping was exceeded. A significant bandgap narrowing was observed from 4.79 to 4.45 eV upon In incorporation. The presence of In in ss-Ga2O3 resulted in a shift in photoluminescence emission from violet to green light. Photoelectrochemical measurements in 0.1 M KOH solution demonstrated a relatively high photocurrent density of 1.720 mA/cm2 at 1.0 V vs. Ag/AgCl for the In/ ss-Ga2O3 heterogeneous film.en_US
dc.description.sponsorshipMinistry of Higher Education Malaysia [FRGS/1/2020/STG05/USM/02/4]; Universiti Sains Malaysia (USM)en_US
dc.description.sponsorshipThe authors acknowledge and thank the Ministry of Higher Education Malaysia for Fundamental Research Grant Scheme with Reference Code: (FRGS/1/2020/STG05/USM/02/4), and Universiti Sains Malaysia (USM) for financial and technical support for this work.en_US
dc.identifier.doi10.1016/j.optmat.2023.114424
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.scopus2-s2.0-85173577664en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2023.114424
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5183
dc.identifier.volume145en_US
dc.identifier.wosWOS:001091772900001en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofOptical Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIndium-incorporationen_US
dc.subjectGallium oxideen_US
dc.subjectPhotoelectrocatalysisen_US
dc.subjectPhotoelectrochemicalen_US
dc.subjectChemical vapour depsotionen_US
dc.titlePhotoanodic properties of In/ß-Ga2O3 nanostructures fabricated under hydrogen reducing ambient by the vapour-phase growth methoden_US
dc.typeArticleen_US

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