Identification of the Frequency- and Voltage-Dependent Dielectric Characterization of Metal-Zn/PVA-Semiconductor Structures

Küçük Resim Yok

Tarih

2019

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Ieee-Inst Electrical Electronics Engineers Inc

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

Admittance measuring methods were applied for the dielectric characterization of a fabricated metal-semiconductor structure, which has a 150-nm polymer interlayer doped with Zn. The components of complex electric modulus and dielectric constant, loss tangent, and the ac electric conductivity parameters of this structure were calculated at room temperature. Distinct frequencies and applied biases lead to extreme changes in all acquired parameters. This alteration was seen as an increment in dielectric constant and loss tangent in view of surface states presence and dipole polarizations. The frequency increment also leads to an increase in electric modulus related with the dielectric relaxation of the polarizations and dipoles. In addition to these results, comparing with a 50-nm interlayered structure, the increment in the thickness of the interlayer increases the dielectric constant and electric modulus and reveals capacitor properties of the structure.

Açıklama

Anahtar Kelimeler

Nano-structures, dielectric properties, interlayer, polymer, frequency dependence

Kaynak

Ieee Transactions On Nanotechnology

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

18

Sayı

Künye