Identification of the Frequency- and Voltage-Dependent Dielectric Characterization of Metal-Zn/PVA-Semiconductor Structures
Küçük Resim Yok
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee-Inst Electrical Electronics Engineers Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Admittance measuring methods were applied for the dielectric characterization of a fabricated metal-semiconductor structure, which has a 150-nm polymer interlayer doped with Zn. The components of complex electric modulus and dielectric constant, loss tangent, and the ac electric conductivity parameters of this structure were calculated at room temperature. Distinct frequencies and applied biases lead to extreme changes in all acquired parameters. This alteration was seen as an increment in dielectric constant and loss tangent in view of surface states presence and dipole polarizations. The frequency increment also leads to an increase in electric modulus related with the dielectric relaxation of the polarizations and dipoles. In addition to these results, comparing with a 50-nm interlayered structure, the increment in the thickness of the interlayer increases the dielectric constant and electric modulus and reveals capacitor properties of the structure.
Açıklama
Anahtar Kelimeler
Nano-structures, dielectric properties, interlayer, polymer, frequency dependence
Kaynak
Ieee Transactions On Nanotechnology
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
18