Integration of Quadrature Oscillator and Floating Inductor in FinFET Transistor Design: Innovations and Applications
Küçük Resim Yok
Tarih
2023
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iran University of Science and Technology
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In the past twenty years, low-voltage and power design have gained attention in analog VLSI design, particularly for high-performance and portable integrated circuits (ICs). Because of the increasing density of large-scale integration, a single silicon A.S.I. chip could have thousands or even millions of transistors on it. A rise in integration levels led to the development of Fin-type Field Effect Transistor (FinFETs) technology. In this research, an improved circuit design for a floating active inductor (FAI) and quadrature sinusoidal oscillator (QSO) is implemented employing only two active filters, the Z-copy-Voltage Differential Transimpedance Amplifier (Zc-VDTA). The purpose of the FAI is to contain two Zc-VDTA and one resistor with a ground capacitor, and it is easy to integrate the parameters of the Zc-VDTA bias current (IB) through the adjustment of the circuit. To verify the dependability of the circuits designed using floating active inductance circuits, a Butterworth fourth-order low-pass filter was created via component replacement. All the simulations have been carried out on 7 nm using linear technology SPICE, and cadence virtuoso tool. © 2023, Iran University of Science and Technology. All rights reserved.
Açıklama
Anahtar Kelimeler
Fin Type Field Effect Transistor (FinFETs), Floating Active Inductor (FAI), Integrated Circuits (ICs), Quadrature Sinusoidal Oscillator (QSO)
Kaynak
Iranian Journal of Electrical and Electronic Engineering
WoS Q Değeri
Scopus Q Değeri
Q4
Cilt
19
Sayı
4
