Integration of Quadrature Oscillator and Floating Inductor in FinFET Transistor Design: Innovations and Applications

dc.contributor.authorMohammed, A.A.
dc.contributor.authorDemirel, H.
dc.date.accessioned2024-09-29T16:16:23Z
dc.date.available2024-09-29T16:16:23Z
dc.date.issued2023
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn the past twenty years, low-voltage and power design have gained attention in analog VLSI design, particularly for high-performance and portable integrated circuits (ICs). Because of the increasing density of large-scale integration, a single silicon A.S.I. chip could have thousands or even millions of transistors on it. A rise in integration levels led to the development of Fin-type Field Effect Transistor (FinFETs) technology. In this research, an improved circuit design for a floating active inductor (FAI) and quadrature sinusoidal oscillator (QSO) is implemented employing only two active filters, the Z-copy-Voltage Differential Transimpedance Amplifier (Zc-VDTA). The purpose of the FAI is to contain two Zc-VDTA and one resistor with a ground capacitor, and it is easy to integrate the parameters of the Zc-VDTA bias current (IB) through the adjustment of the circuit. To verify the dependability of the circuits designed using floating active inductance circuits, a Butterworth fourth-order low-pass filter was created via component replacement. All the simulations have been carried out on 7 nm using linear technology SPICE, and cadence virtuoso tool. © 2023, Iran University of Science and Technology. All rights reserved.en_US
dc.identifier.doi10.22068/IJEEE.19.4.2862
dc.identifier.issn1735-2827
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85182466751en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.urihttps://doi.org/10.22068/IJEEE.19.4.2862
dc.identifier.urihttps://hdl.handle.net/20.500.14619/9063
dc.identifier.volume19en_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIran University of Science and Technologyen_US
dc.relation.ispartofIranian Journal of Electrical and Electronic Engineeringen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectFin Type Field Effect Transistor (FinFETs)en_US
dc.subjectFloating Active Inductor (FAI)en_US
dc.subjectIntegrated Circuits (ICs)en_US
dc.subjectQuadrature Sinusoidal Oscillator (QSO)en_US
dc.titleIntegration of Quadrature Oscillator and Floating Inductor in FinFET Transistor Design: Innovations and Applicationsen_US
dc.typeArticleen_US

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