On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80-360 K

Küçük Resim Yok

Tarih

2020

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Springer

Erişim Hakkı

info:eu-repo/semantics/openAccess

Özet

Au/PVA/n-GaAs (MPS) type Schottky diodes (SDs) were fabricated and investigated in a temperature range of 80-360 K to explain their possible conduction mechanisms (CMs). Three distinct linear regions with different slopes were observed in ln(I)-Vplots. The first region (R1), is within the range of 0.22-0.60 V, the second region (R2), is within the range of 0.64-0.90 V, and the third region (R3), is within the range of 1.1-1.5 V. It was shown that both ideality factor (n) and zero-bias barrier height (phi(Bo)) are strong functions of temperature for all three regions. It was noticed thatnvalues decreased and phi(Bo)values increased with increasing temperature. In order to ascertain the possible CMs, phi(Bo) - n, - phi(Bo) - q/2kT, and (n(-1) - 1) - q/2kTplots were also examined. In each of these plots, two linear regions were obtained within each of the three regions. The region from 80-180 K is called the low-temperature range (LTR), and the region from 200-360 K is called the high-temperature range (HTR). It has been revealed that the reason for the deviation from the classical thermionic emission (TE) theory cannot be explained only by the existence of the interface layer, interface states (N-SS) or quantum mechanical tunneling mechanisms, which can be also explained by the double Gaussian distribution (DGD) due to barrier inhomogeneity. Finally, the experimental Richardson constants (A*) were calculated from the interception point of the modified Richardson curve in LTR and HTR for all three regions. It was calculated as 6.22 and 8.13 A/cm(2)K(2)for RI, 7.77 and 8.14 A/cm(2)K(2)at R2, and 7.07 and 8.13 A/cm(2)K(2)at R3 for low- and high-temperature ranges, respectively. It is clear that especially HTR results are quite close to the known theoreticalA* value of 8.16 A/cm(2)K(2)for n-GaAs.

Açıklama

Anahtar Kelimeler

Au, PVA, n-GaAs SDs, possible conduction-mechanisms, multi-parallel diodes, double Gaussian distribution (DGD) of BH

Kaynak

Journal of Electronic Materials

WoS Q Değeri

Q3

Scopus Q Değeri

Q3

Cilt

49

Sayı

12

Künye