On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80-360 K

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dc.authoridEVCIN BAYDILLI, Esra/0000-0001-8582-5041
dc.authoridUslu Tecimer, Habibe/0000-0002-0094-7427
dc.authoridKaymaz, Ahmet/0000-0003-2262-1599
dc.contributor.authorEvcin Baydilli, E.
dc.contributor.authorKaymaz, A.
dc.contributor.authorUslu Tecimer, H.
dc.contributor.authorAltindal, S.
dc.date.accessioned2024-09-29T15:51:29Z
dc.date.available2024-09-29T15:51:29Z
dc.date.issued2020
dc.departmentKarabük Üniversitesien_US
dc.description.abstractAu/PVA/n-GaAs (MPS) type Schottky diodes (SDs) were fabricated and investigated in a temperature range of 80-360 K to explain their possible conduction mechanisms (CMs). Three distinct linear regions with different slopes were observed in ln(I)-Vplots. The first region (R1), is within the range of 0.22-0.60 V, the second region (R2), is within the range of 0.64-0.90 V, and the third region (R3), is within the range of 1.1-1.5 V. It was shown that both ideality factor (n) and zero-bias barrier height (phi(Bo)) are strong functions of temperature for all three regions. It was noticed thatnvalues decreased and phi(Bo)values increased with increasing temperature. In order to ascertain the possible CMs, phi(Bo) - n, - phi(Bo) - q/2kT, and (n(-1) - 1) - q/2kTplots were also examined. In each of these plots, two linear regions were obtained within each of the three regions. The region from 80-180 K is called the low-temperature range (LTR), and the region from 200-360 K is called the high-temperature range (HTR). It has been revealed that the reason for the deviation from the classical thermionic emission (TE) theory cannot be explained only by the existence of the interface layer, interface states (N-SS) or quantum mechanical tunneling mechanisms, which can be also explained by the double Gaussian distribution (DGD) due to barrier inhomogeneity. Finally, the experimental Richardson constants (A*) were calculated from the interception point of the modified Richardson curve in LTR and HTR for all three regions. It was calculated as 6.22 and 8.13 A/cm(2)K(2)for RI, 7.77 and 8.14 A/cm(2)K(2)at R2, and 7.07 and 8.13 A/cm(2)K(2)at R3 for low- and high-temperature ranges, respectively. It is clear that especially HTR results are quite close to the known theoreticalA* value of 8.16 A/cm(2)K(2)for n-GaAs.en_US
dc.description.sponsorshipGazi University Scientific Research Project [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipThis study was supported by Gazi University Scientific Research Project (Project Number: GU-BAP.05/2019-26).en_US
dc.identifier.doi10.1007/s11664-020-08473-4
dc.identifier.endpage7434en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85091732990en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage7427en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-020-08473-4
dc.identifier.urihttps://hdl.handle.net/20.500.14619/4100
dc.identifier.volume49en_US
dc.identifier.wosWOS:000573741500001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAuen_US
dc.subjectPVAen_US
dc.subjectn-GaAs SDsen_US
dc.subjectpossible conduction-mechanismsen_US
dc.subjectmulti-parallel diodesen_US
dc.subjectdouble Gaussian distribution (DGD) of BHen_US
dc.titleOn the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80-360 Ken_US
dc.typeArticleen_US

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