Effects of deposition temperatures on the supercapacitor cathode performances of GO:SnSbS/Si thin films
Küçük Resim Yok
Tarih
2021
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The performances of the new generation energy storage devices are strongly dependent on the physical and chemical properties of the electrode materials; therefore, the development of high-activity electrode materials is of great importance. For this purpose, Graphene oxide: Antimony sulfide (on Si substrate) thin films were produced at different deposition temperatures via chemical bath deposition (CBD) and their supercapacitor performances were investigated. Specific capacitance values were calculated through time-dependent current-voltage (I-V) measurements in the range of -0.2 V - 0.8 V, at 5 mV/s, 10 mV/s and 20 mV/s scanning rates. The maximum specific capacitance for each deposition temperature at scanning rate of 5 mV/s was found to be 562 F/g, 549 F/g, 401 F/g and 254 F/g, respectively.
Açıklama
Anahtar Kelimeler
SnSbS, Graphene oxide, Supercapacitor, Specific capacitance
Kaynak
Journal of Energy Storage
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
33
