Effects of deposition temperatures on the supercapacitor cathode performances of GO:SnSbS/Si thin films
dc.authorid | korkmaz, satiye/0000-0002-7592-3366 | |
dc.contributor.author | Korkmaz, S. | |
dc.contributor.author | Tezel, F. Meydaneri | |
dc.contributor.author | Kariper, I. A. | |
dc.contributor.author | Serin, A. | |
dc.date.accessioned | 2024-09-29T15:55:24Z | |
dc.date.available | 2024-09-29T15:55:24Z | |
dc.date.issued | 2021 | |
dc.department | Karabük Üniversitesi | en_US |
dc.description.abstract | The performances of the new generation energy storage devices are strongly dependent on the physical and chemical properties of the electrode materials; therefore, the development of high-activity electrode materials is of great importance. For this purpose, Graphene oxide: Antimony sulfide (on Si substrate) thin films were produced at different deposition temperatures via chemical bath deposition (CBD) and their supercapacitor performances were investigated. Specific capacitance values were calculated through time-dependent current-voltage (I-V) measurements in the range of -0.2 V - 0.8 V, at 5 mV/s, 10 mV/s and 20 mV/s scanning rates. The maximum specific capacitance for each deposition temperature at scanning rate of 5 mV/s was found to be 562 F/g, 549 F/g, 401 F/g and 254 F/g, respectively. | en_US |
dc.description.sponsorship | Karabuk University BAP [KBUBAP-18-YL-169]; Karabuk University Scientific Research Project Unit | en_US |
dc.description.sponsorship | Karabuk University BAP supported this study; Contract No.: KBUBAP-18-YL-169. The authors would like to thank the Karabuk University Scientific Research Project Unit for their financial support. | en_US |
dc.identifier.doi | 10.1016/j.est.2020.102116 | |
dc.identifier.issn | 2352-152X | |
dc.identifier.scopus | 2-s2.0-85097352654 | en_US |
dc.identifier.scopusquality | Q1 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.est.2020.102116 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14619/4619 | |
dc.identifier.volume | 33 | en_US |
dc.identifier.wos | WOS:000605634700007 | en_US |
dc.identifier.wosquality | Q1 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartof | Journal of Energy Storage | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | SnSbS | en_US |
dc.subject | Graphene oxide | en_US |
dc.subject | Supercapacitor | en_US |
dc.subject | Specific capacitance | en_US |
dc.title | Effects of deposition temperatures on the supercapacitor cathode performances of GO:SnSbS/Si thin films | en_US |
dc.type | Article | en_US |