Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure
Küçük Resim Yok
Tarih
2019
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee-Inst Electrical Electronics Engineers Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The capacity/conductivity-voltage (C/G-V) data of the PVP interlayered metal-semiconductor structure were examined at +/- 4V biases and 1-500 kHz frequency interval at room temperature. The surface states (N-ss) in the insulation layer and the metal-semiconductor interface are seen as the main causes of high capacitance and conductivity values at low frequencies. AC signals, which result in an increase in capacitance and conductivity values, are easily monitored by N-ss at low frequencies. The graph extracted against the conductivity and frequency logarithm (G(p)/omega-log(f)) indicates a peak appearance as a result of the N-ss effect. In the energy range of (E-c -0.423) - (E-c-0.604), surface states (N-ss) and relaxation times (tau) values alter from 8.71 x 10(11) to 5.84 x 10(11) eV(-1) cm(-2) and 6.54x10(-6) s to 1.10x10(-4) s, respectively.
Açıklama
Anahtar Kelimeler
Polymers, metal-semiconductor structure, electric admittance, surface states, relaxation times
Kaynak
Ieee Transactions On Nanotechnology
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
18
