Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure

Küçük Resim Yok

Tarih

2019

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Ieee-Inst Electrical Electronics Engineers Inc

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

The capacity/conductivity-voltage (C/G-V) data of the PVP interlayered metal-semiconductor structure were examined at +/- 4V biases and 1-500 kHz frequency interval at room temperature. The surface states (N-ss) in the insulation layer and the metal-semiconductor interface are seen as the main causes of high capacitance and conductivity values at low frequencies. AC signals, which result in an increase in capacitance and conductivity values, are easily monitored by N-ss at low frequencies. The graph extracted against the conductivity and frequency logarithm (G(p)/omega-log(f)) indicates a peak appearance as a result of the N-ss effect. In the energy range of (E-c -0.423) - (E-c-0.604), surface states (N-ss) and relaxation times (tau) values alter from 8.71 x 10(11) to 5.84 x 10(11) eV(-1) cm(-2) and 6.54x10(-6) s to 1.10x10(-4) s, respectively.

Açıklama

Anahtar Kelimeler

Polymers, metal-semiconductor structure, electric admittance, surface states, relaxation times

Kaynak

Ieee Transactions On Nanotechnology

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

18

Sayı

Künye