Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure

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dc.contributor.authorAlptekin, Sebahaddin
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T16:04:31Z
dc.date.available2024-09-29T16:04:31Z
dc.date.issued2019
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe capacity/conductivity-voltage (C/G-V) data of the PVP interlayered metal-semiconductor structure were examined at +/- 4V biases and 1-500 kHz frequency interval at room temperature. The surface states (N-ss) in the insulation layer and the metal-semiconductor interface are seen as the main causes of high capacitance and conductivity values at low frequencies. AC signals, which result in an increase in capacitance and conductivity values, are easily monitored by N-ss at low frequencies. The graph extracted against the conductivity and frequency logarithm (G(p)/omega-log(f)) indicates a peak appearance as a result of the N-ss effect. In the energy range of (E-c -0.423) - (E-c-0.604), surface states (N-ss) and relaxation times (tau) values alter from 8.71 x 10(11) to 5.84 x 10(11) eV(-1) cm(-2) and 6.54x10(-6) s to 1.10x10(-4) s, respectively.en_US
dc.identifier.doi10.1109/TNANO.2019.2952081
dc.identifier.endpage1199en_US
dc.identifier.issn1536-125X
dc.identifier.issn1941-0085
dc.identifier.scopus2-s2.0-85075659279en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1196en_US
dc.identifier.urihttps://doi.org/10.1109/TNANO.2019.2952081
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6178
dc.identifier.volume18en_US
dc.identifier.wosWOS:000547508700001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Nanotechnologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPolymersen_US
dc.subjectmetal-semiconductor structureen_US
dc.subjectelectric admittanceen_US
dc.subjectsurface statesen_US
dc.subjectrelaxation timesen_US
dc.titleDetermination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structureen_US
dc.typeArticleen_US

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