Enhanced photoelectrochemical transient photoresponse properties of molybdenum oxide film deposited on black silicon

Küçük Resim Yok

Tarih

2023

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Elsevier

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

Nanostructured black silicon (b-Si) is widely deployed for different solar applications due to its novel light-harvesting characteristics, and large surface area-to-volume ratio. The present research work applies a novel approach via the chemical vapour deposition method to prepare molybdenum oxide (MoO3) film on a b-Si substrate for photoelectrochemical application. X-ray diffraction revealed alpha-MoO3 phase, with the MoO3/b-Si film exhibiting a relatively large crystallite size and improved crystalline quality. Optical reflectance measure-ments showed a relatively low reflectance and reduced optical bandgap energy for the MoO3/b-Si film. Chro-noamperometric measurements showed an enhanced photocurrent density of 656.34 mu A/cm2 at 1 V bias for the MoO3/b-Si photoanode measured in a 0.5 M H2SO4 solution. The enhanced photoelectrochemical activity could be attributed to an increase in light absorption, the relatively small bandgap energy, improved crystalline quality, and improved charge carrier separation and transfer at the interface.

Açıklama

Anahtar Kelimeler

Molybdenum oxide, Photoelectrochemical water splitting, Photocatalysis, Black silicon, Chemical vapour deposition

Kaynak

Materials Science and Engineering B-Advanced Functional Solid-State Materials

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

289

Sayı

Künye