Enhanced photoelectrochemical transient photoresponse properties of molybdenum oxide film deposited on black silicon

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dc.authoridOnah, Uche/0009-0008-4439-9662
dc.authoridChahrour, Khaled M. N./0000-0002-8799-3468
dc.authoridDONALD DEHIIN, HILE/0000-0001-6869-7025
dc.authoridAkiiga, Ngutor Simon/0000-0002-5339-2365
dc.authoridJubu, Rex/0000-0002-5249-1273
dc.contributor.authorJubu, Peverga R.
dc.contributor.authorYusuf, Bashir
dc.contributor.authorAbdulkadir, Auwal
dc.contributor.authorObaseki, O. S.
dc.contributor.authorChahrour, Khaled M.
dc.contributor.authorYusof, Yushamdan
dc.contributor.authorDehiin, Hile D.
dc.date.accessioned2024-09-29T16:00:27Z
dc.date.available2024-09-29T16:00:27Z
dc.date.issued2023
dc.departmentKarabük Üniversitesien_US
dc.description.abstractNanostructured black silicon (b-Si) is widely deployed for different solar applications due to its novel light-harvesting characteristics, and large surface area-to-volume ratio. The present research work applies a novel approach via the chemical vapour deposition method to prepare molybdenum oxide (MoO3) film on a b-Si substrate for photoelectrochemical application. X-ray diffraction revealed alpha-MoO3 phase, with the MoO3/b-Si film exhibiting a relatively large crystallite size and improved crystalline quality. Optical reflectance measure-ments showed a relatively low reflectance and reduced optical bandgap energy for the MoO3/b-Si film. Chro-noamperometric measurements showed an enhanced photocurrent density of 656.34 mu A/cm2 at 1 V bias for the MoO3/b-Si photoanode measured in a 0.5 M H2SO4 solution. The enhanced photoelectrochemical activity could be attributed to an increase in light absorption, the relatively small bandgap energy, improved crystalline quality, and improved charge carrier separation and transfer at the interface.en_US
dc.description.sponsorshipNigerian Government for the Tertiary Education Trust Fund for academic staff training grant [III/704]en_US
dc.description.sponsorshipAcknowledgements The authors sincerely appreciate the Nigerian Government for the Tertiary Education Trust Fund for academic staff training grant with the award number TETFUND/ES/ASTD/UNI/BENUE/2016/Vol. III/704. The authors are grateful to the staff of the Nano-optoelectronics Research Laboratory, Universiti Sains Malaysia for providing technical assistance during the laboratory experiments and materials characterization.en_US
dc.identifier.doi10.1016/j.mseb.2023.116260
dc.identifier.issn0921-5107
dc.identifier.issn1873-4944
dc.identifier.scopus2-s2.0-85145979007en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2023.116260
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5154
dc.identifier.volume289en_US
dc.identifier.wosWOS:000998084600001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMaterials Science and Engineering B-Advanced Functional Solid-State Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMolybdenum oxideen_US
dc.subjectPhotoelectrochemical water splittingen_US
dc.subjectPhotocatalysisen_US
dc.subjectBlack siliconen_US
dc.subjectChemical vapour depositionen_US
dc.titleEnhanced photoelectrochemical transient photoresponse properties of molybdenum oxide film deposited on black siliconen_US
dc.typeArticleen_US

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