Intersubband transitions in InxGa1-xN/InyGa1-yN/GaN staggered quantum wells
Küçük Resim Yok
Tarih
2014
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Inst Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrodinger and Poisson equations are solved self-consistently by taking the free and bound surface charge concentrations into account. Many-body effects, namely, depolarization and excitonic shifts are also included in the calculations. Results for transition energies, oscillator strength, and the absorption lineshape up to nonlinear regime are represented as functions of the parameters mentioned. The well width (total and constituent layers separately) and In concentration dependence of the built-in electric field are exploited to tune the intersubband transition energies. (C) 2014 AIP Publishing LLC.
Açıklama
Anahtar Kelimeler
Light-Emitting-Diodes
Kaynak
Journal of Applied Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
115
Sayı
16
