Intersubband transitions in InxGa1-xN/InyGa1-yN/GaN staggered quantum wells

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dc.contributor.authorYildirim, Hasan
dc.contributor.authorAslan, Bulent
dc.date.accessioned2024-09-29T16:01:09Z
dc.date.available2024-09-29T16:01:09Z
dc.date.issued2014
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIntersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrodinger and Poisson equations are solved self-consistently by taking the free and bound surface charge concentrations into account. Many-body effects, namely, depolarization and excitonic shifts are also included in the calculations. Results for transition energies, oscillator strength, and the absorption lineshape up to nonlinear regime are represented as functions of the parameters mentioned. The well width (total and constituent layers separately) and In concentration dependence of the built-in electric field are exploited to tune the intersubband transition energies. (C) 2014 AIP Publishing LLC.en_US
dc.description.sponsorshipAnadolu University [BAP-1106F121]en_US
dc.description.sponsorshipThis work was supported in part by Anadolu University under the Project No. BAP-1106F121.en_US
dc.identifier.doi10.1063/1.4872251
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue16en_US
dc.identifier.scopus2-s2.0-84900000763en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1063/1.4872251
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5554
dc.identifier.volume115en_US
dc.identifier.wosWOS:000335228400061en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectLight-Emitting-Diodesen_US
dc.titleIntersubband transitions in InxGa1-xN/InyGa1-yN/GaN staggered quantum wellsen_US
dc.typeArticleen_US

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