Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures
Küçük Resim Yok
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
InxGa1-xN/ZnSnN2 quantum well structures are studied in terms of a binding energy of a donor atom. 1s and 2p +/- impurity states are considered. The Schrodinger's and Poisson's equations are solved self-consistently. A hydrogenic type wave function to represent each impurity state is assumed. The calculations include band-bending in the potential energy profile introduced by the built-in electric field existing along the structures. The binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration. An external magnetic field up to 10 T is included into the calculations to compute the Zeeman splitting. The maximum value of the transition energy is around 30 meV (nearly 7.3 THz) which occurs in a 15-angstrom In0.3Ga0.7N/ZnSnN2 quantum well. Being strong, the built-in electric field makes the transition energy drop quickly with the decreasing well width. For the same reason, the energy curves are found to be highly asymmetric function of the donor position around the well center. Compared to the bulk value, the transition energy in the quantum well structures enhances nearly two-fold. (C) 2019 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
GaN, ZnSnN2, Impurity, Donor, Binding energy, Quantum well
Kaynak
Physics Letters A
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
383
Sayı
12
