Effects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structures

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dc.authoridYILDIRIM, Hasan/0000-0002-7436-7759
dc.contributor.authorYildirim, Hasan
dc.date.accessioned2024-09-29T16:00:32Z
dc.date.available2024-09-29T16:00:32Z
dc.date.issued2019
dc.departmentKarabük Üniversitesien_US
dc.description.abstractInxGa1-xN/ZnSnN2 quantum well structures are studied in terms of a binding energy of a donor atom. 1s and 2p +/- impurity states are considered. The Schrodinger's and Poisson's equations are solved self-consistently. A hydrogenic type wave function to represent each impurity state is assumed. The calculations include band-bending in the potential energy profile introduced by the built-in electric field existing along the structures. The binding energy and the energy of the transition between the impurity states are represented as a function of the quantum well width, the donor position, and the indium concentration. An external magnetic field up to 10 T is included into the calculations to compute the Zeeman splitting. The maximum value of the transition energy is around 30 meV (nearly 7.3 THz) which occurs in a 15-angstrom In0.3Ga0.7N/ZnSnN2 quantum well. Being strong, the built-in electric field makes the transition energy drop quickly with the decreasing well width. For the same reason, the energy curves are found to be highly asymmetric function of the donor position around the well center. Compared to the bulk value, the transition energy in the quantum well structures enhances nearly two-fold. (C) 2019 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physleta.2019.01.046
dc.identifier.endpage1329en_US
dc.identifier.issn0375-9601
dc.identifier.issn1873-2429
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85060841276en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1324en_US
dc.identifier.urihttps://doi.org/10.1016/j.physleta.2019.01.046
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5214
dc.identifier.volume383en_US
dc.identifier.wosWOS:000464089200018en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofPhysics Letters Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGaNen_US
dc.subjectZnSnN2en_US
dc.subjectImpurityen_US
dc.subjectDonoren_US
dc.subjectBinding energyen_US
dc.subjectQuantum wellen_US
dc.titleEffects of built-in electric field on donor binding energy in InGaN/ZnSnN2 quantum well structuresen_US
dc.typeArticleen_US

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