The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer
Küçük Resim Yok
Tarih
2022
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee-Inst Electrical Electronics Engineers Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this research, the dielectric characteristics of fabricated Al/(ZnFe2O4-PVA)/p-Si structures have been investigated in wide range frequency and voltage. Thus, by deriving capacitance-conductance (C-G/omega) measurements the main parameters of the metal-polymer-semiconductor (MPS) structure such as complex dielectric constants (epsilon ' and epsilon ''), loss tangent (tan delta), complex electric modulus (M ' and M '') and ac electrical conductivity (sigma(ac)), were acquired at frequency and voltage ranges of 1 kHz-1 MHz and (+/- 5V). As a result of the experiment, it was observed that the presence of negative capacitance (NC) at low frequencies differently affects the dielectric properties of the structure. Although the NC effect disappeared at high frequencies by the reduction of the effect of many parameters such as series resistance (R-ss) and interface states (N-ss) with frequency increment, the dielectric properties of the structure varied especially in the reverse bias region. Ultimately, it has been observed that the dielectric properties of the structure are highly dependent on frequency, voltage, N-ss, and polarization.
Açıklama
Anahtar Kelimeler
Polymers, Dielectrics, Capacitance, Conductivity, Semiconductor device measurement, Interface states, Ferrites, Metal-Polymer-Semiconductor structure, Doping, Dielectric properties, Electric modulus, AC conductivity, Frequency dependence
Kaynak
Ieee Transactions On Nanotechnology
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
21