The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer

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dc.authoridalsmael, jaafar/0000-0002-2426-9421
dc.contributor.authorAlsmael, Jaafar Abdulkareem Mustafa
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorTecimer, Habibe Uslu
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorKalandaragh, Yashar Azizian
dc.date.accessioned2024-09-29T16:04:31Z
dc.date.available2024-09-29T16:04:31Z
dc.date.issued2022
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn this research, the dielectric characteristics of fabricated Al/(ZnFe2O4-PVA)/p-Si structures have been investigated in wide range frequency and voltage. Thus, by deriving capacitance-conductance (C-G/omega) measurements the main parameters of the metal-polymer-semiconductor (MPS) structure such as complex dielectric constants (epsilon ' and epsilon ''), loss tangent (tan delta), complex electric modulus (M ' and M '') and ac electrical conductivity (sigma(ac)), were acquired at frequency and voltage ranges of 1 kHz-1 MHz and (+/- 5V). As a result of the experiment, it was observed that the presence of negative capacitance (NC) at low frequencies differently affects the dielectric properties of the structure. Although the NC effect disappeared at high frequencies by the reduction of the effect of many parameters such as series resistance (R-ss) and interface states (N-ss) with frequency increment, the dielectric properties of the structure varied especially in the reverse bias region. Ultimately, it has been observed that the dielectric properties of the structure are highly dependent on frequency, voltage, N-ss, and polarization.en_US
dc.identifier.doi10.1109/TNANO.2022.3207900
dc.identifier.endpage533en_US
dc.identifier.issn1536-125X
dc.identifier.issn1941-0085
dc.identifier.scopus2-s2.0-85139426773en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage528en_US
dc.identifier.urihttps://doi.org/10.1109/TNANO.2022.3207900
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6179
dc.identifier.volume21en_US
dc.identifier.wosWOS:000862373000001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Nanotechnologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPolymersen_US
dc.subjectDielectricsen_US
dc.subjectCapacitanceen_US
dc.subjectConductivityen_US
dc.subjectSemiconductor device measurementen_US
dc.subjectInterface statesen_US
dc.subjectFerritesen_US
dc.subjectMetal-Polymer-Semiconductor structureen_US
dc.subjectDopingen_US
dc.subjectDielectric propertiesen_US
dc.subjectElectric modulusen_US
dc.subjectAC conductivityen_US
dc.subjectFrequency dependenceen_US
dc.titleThe Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayeren_US
dc.typeArticleen_US

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