Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode

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dc.contributor.authorAnutgan, M.
dc.contributor.authorAtilgan, I.
dc.date.accessioned2024-09-29T16:01:09Z
dc.date.available2024-09-29T16:01:09Z
dc.date.issued2013
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe anomalous capacitance-frequency (C-f) behavior of hydrogenated amorphous silicon (a-Si:H) p-i-n diode is studied under different forward bias voltages. Instead of the negative capacitance part of the spectra, the positive part is analyzed, where the traditional charge modulation rather than their transport or their recombination dominates the reactive current. Since the physics of the charge modulation under a particular bias is directly related to the depth and the density of the relevant gap states, the forward bias voltage scanned C-f curves are used to estimate the energy distribution of the density of states within the forbidden gap. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802275]en_US
dc.identifier.doi10.1063/1.4802275
dc.identifier.issn0003-6951
dc.identifier.issue15en_US
dc.identifier.scopus2-s2.0-84877138937en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1063/1.4802275
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5553
dc.identifier.volume102en_US
dc.identifier.wosWOS:000318269200091en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAmer Inst Physicsen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectHydrogenated Amorphous-Siliconen_US
dc.subjectLimited Current Measurementsen_US
dc.subjectLight-Emitting Diodeen_US
dc.subjectSolar-Cellsen_US
dc.subjectNegative Capacitanceen_US
dc.subjectVoltage Characteristicsen_US
dc.subjectGap Statesen_US
dc.subjectThin-Filmsen_US
dc.subjectAdmittanceen_US
dc.subjectDensityen_US
dc.titleForward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diodeen_US
dc.typeArticleen_US

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