The effect of radiation on the forward and reverse bias current-voltage (I-V) characteristics of Au/(Bi4Ti3O12/SiO2)/n-Si (MFIS) structures

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dc.authoridKARAL, Omer/0000-0001-8742-8189
dc.authoridUslu Tecimer, Habibe/0000-0002-0094-7427
dc.authoridDULKADIR, Sezgin/0000-0002-4511-9895
dc.contributor.authorDulkadir, S.
dc.contributor.authorTecimer, H. Uslu
dc.contributor.authorParlakturk, F.
dc.contributor.authorAltmdar, S.
dc.contributor.authorKaral, O.
dc.date.accessioned2024-09-29T15:51:16Z
dc.date.available2024-09-29T15:51:16Z
dc.date.issued2020
dc.departmentKarabük Üniversitesien_US
dc.description.abstractDetermining the radiation effects on the basic electrical parameters of the fabricated high-dielectric MFIS structures, they were exposed to the high-energy(60)Co gamma-rays. For this purpose, the values of ideality factor (n), barrier height (phi(B)) and series resistance (R-s) were extracted from the forward biasI-Vdata before and after irradiation by using various methods such as standard thermionic emission (TE) theory, Cheung's and Norde functions. Additionally, the energy-dependent profile of surface statesN(ss)was extracted by considering voltage dependence ofn,phi(B)andR(s)and compared each other. Experimental results show that the reverse saturation current (I-o),nandR(s)values increase with increasing radiation dose, but phi(B)decreases. When the value ofR(s)is considered in the calculation ofN(ss), they were found to be considerably decreased. The observed low discrepancies betweenN(ss)after irradiation show that the use of a high-dielectric ferroelectric interlayer leads to an increase in the resistance of MS to radiation. It is more important to fabricate radiation-resisted electronic device, especially in the satellites due to hard radiation in space. As a result,N-ss,R(s)and the existence of interlayer are more effectual on theI-Vcharacteristics which must be considered in the electrical parameter calculation.en_US
dc.description.sponsorshipGazi University Scientific Research Center [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipAll authors would like to thank Gazi University Scientific Research Center for the supports and contributions (Project No: GU-BAP.05/2019-26).en_US
dc.identifier.doi10.1007/s10854-020-03801-0
dc.identifier.endpage12521en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue15en_US
dc.identifier.scopus2-s2.0-85086771998en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage12514en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03801-0
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3986
dc.identifier.volume31en_US
dc.identifier.wosWOS:000542132000003en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDependent Series Resistanceen_US
dc.subjectElectrical Characteristicsen_US
dc.subjectFerroelectric Propertiesen_US
dc.subjectInterface Statesen_US
dc.subjectC-Ven_US
dc.subjectSchottkyen_US
dc.subjectDiodesen_US
dc.subjectIrradiationen_US
dc.subjectProfileen_US
dc.subjectLayeren_US
dc.titleThe effect of radiation on the forward and reverse bias current-voltage (I-V) characteristics of Au/(Bi4Ti3O12/SiO2)/n-Si (MFIS) structuresen_US
dc.typeArticleen_US

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