Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes
Küçük Resim Yok
Tarih
2018
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Schottky barrier diodes (SBDs) have been fabricated with pure and zinc (Zn) doped organic interfacial layer of polyvinyl alcohol (PVA) to form Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs structures. The electrical characterization of these SBDs have also been made using their current-voltage (I-V) characteristics data on both forward and reverse biases at room temperature. The main electrical parameters, such as ideality factor (n), barrier height (I broken vertical bar (Bo)), series resistance (R (s)) and the voltage dependence resistance (R (i)) have also been extracted from the I-V data to compare the Zn-doped and undoped polymer interfacial layer SBDs. The rectifying ratio values of Au/PVA/n-GaAs and Au/PVA(Zn-doped)/n-GaAs SBDs have been obtained as 10(5) and 10(7), respectively, at (+/- 2 V). Consequently, the comparison of the polymer interfacial layer SBDs indicates that the Zn-doped SBDs have given better results than the undoped SBDs when considering the main electrical parameters at room temperature.
Açıklama
Anahtar Kelimeler
Nanocomposite, Schottky diode, Polymer, Interfacial Layer, PVA
Kaynak
Polymer Bulletin
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
75
Sayı
9
